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4N100-FC

null4.0A,1000VN-CHANNELPOWERMOSFET

?DESCRIPTION TheUTC4N100-FCprovideexcellentRDS(ON),lowgate chargeandoperationwithlowgatevoltages.Thisdevice suitableforuseasaloadswitchorinPWMapplications. ?FEATURES0 *RDS(ON)≤6.0Ω@VGS=10V,ID=2.0A *LowReverseTransferCapacitance *FastSwitchingCapabi

UTCUnisonic Technologies

友順友順科技股份有限公司

DAM4N100L

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

IXFA4N100P

PolarHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFA4N100P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFA4N100P

PowerMOSFET

IXYS

IXYS Corporation

IXFA4N100Q

HiPerFETPowerMOSFETsQ-Class

HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQ g process ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?Ratedforunclamped

IXYS

IXYS Corporation

IXFA4N100Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH4N100

HiPerFETPowerMOSFETsQ-Class

Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Eas

IXYS

IXYS Corporation

IXFH4N100Q

HiPerFETPowerMOSFETsQ-Class

Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Eas

IXYS

IXYS Corporation

IXFH4N100Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP4N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP4N100P

PolarHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFP4N100P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP4N100P

PowerMOSFET

IXYS

IXYS Corporation

IXFP4N100PM

PolarHiperFETPowerMOSFET

IXYS

IXYS Corporation

IXFP4N100Q

HiPerFETPowerMOSFETsQ-Class

HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQ g process ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?Ratedforunclamped

IXYS

IXYS Corporation

IXFP4N100Q

HiperFETPowerMOSFETsQ-Class

IXYS

IXYS Corporation

IXFP4N100QM

HiPerFETPowerMOSFETQ-Class

IXYS

IXYS Corporation

IXFR4N100Q

HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackside)

Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFR4N100Q

N-ChannelMOSFET

FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·DC-DCconverters ·ACmotorcontrol ·Batterychargers

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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更多MTP4N100供應(yīng)商 更新時間2024-10-26 12:26:00

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