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MTP50

Glass Passivated Three-Phase Bridge Rectifier, 50A

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

MTP50N03

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP50N05E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP50N06

TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfo

Motorola

Motorola, Inc

MTP50N06

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.032OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and

Motorola

Motorola, Inc

MTP50N06

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50an

Motorola

Motorola, Inc

MTP50N06E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP50N06EL

TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOSE-FET?PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfo

Motorola

Motorola, Inc

MTP50N06V

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50an

Motorola

Motorola, Inc

MTP50N06V

TMOS V??Power Field Effect Transistor

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50an

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP50N06VL

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.032OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and

Motorola

Motorola, Inc

MTP50P03HDL

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP50P03HDL

TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM

HDTMOSE-FETPowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecover

Motorola

Motorola, Inc

MTP500

UL recognition file number E320098

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

MTP5006A1

Glass Passivated Triple-Phase Bridge Rectifier

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

MTP5006M1

Glass Passivated Triple-Phase Bridge Rectifier

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

MTP5006W

Glass Passivated Triple-Phase Bridge Rectifier

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

MTP5008A1

Glass Passivated Triple-Phase Bridge Rectifier

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

MTP5008L

Glass Passivated Three-Phase Bridge Rectifier

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

MTP5008M1

Glass Passivated Triple-Phase Bridge Rectifier

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    MTP50

  • 制造商：

    NELLSEMI

  • 制造商全稱：

    Nell Semiconductor Co., Ltd

  • 功能描述：

    Glass Passivated Three-Phase Bridge Rectifier, 50A

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
MOT
06+
TO-220
3800
全新原裝 絕對(duì)有貨
 詢價(jià)
24+
1100
真實(shí)現(xiàn)貨庫存
 詢價(jià)
ONS
2016+
3TO-220
6528
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
 詢價(jià)
ON
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價(jià)
ON
23+
TO220AB
5000
原裝正品,假一罰十
 詢價(jià)
MOT
23+
TO-220
6680
全新原裝優(yōu)勢(shì)
 詢價(jià)
MOT
17+
TO-220
6200
詢價(jià)
ON
23+
TO-220
6893
詢價(jià)
ON
16+
TO-220
3000
原裝現(xiàn)貨假一罰十
 詢價(jià)
MOT
2020+
TO220
120000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
 詢價(jià)
更多MTP50供應(yīng)商 更新時(shí)間2024-11-16 10:32:00

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