MTW23N25E中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTW23N25E規(guī)格書詳情
TMOS E?FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
? Isolated Mounting Hole Reduces Mounting Hardware
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托羅拉 |
22+ |
NA |
99181 |
鄭重承諾只做原裝進口貨 |
詢價 | ||
ON/安森美 |
22+ |
DIP |
15664 |
詢價 | |||
MOTOROLA/摩托羅拉 |
24+ |
N/A |
5000 |
只做原裝正品現(xiàn)貨 |
詢價 | ||
ON/安森美 |
24+ |
TO247 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費! |
詢價 | ||
INTERPOINT |
21+ |
NA |
2250 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
ST |
TO-3P |
93480 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
MOTOROLA/摩托羅拉 |
23+ |
NA |
25630 |
原裝正品 |
詢價 | ||
ON |
23+ |
TO-247 |
6893 |
詢價 | |||
MOTOROLA/摩托羅拉 |
21+ |
NA |
12820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
INTERPOINT |
23+ |
66800 |
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！ |
詢價 |
