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MUR6080PL

60.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ThinkiSemilatest&maturedprocessFRD ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerSupply

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

MUR6080PR

60.0AmpereHeatsinkDualDoublerPolarityUltraFastRecoveryRectifiers

Features ※ThinkiSemilatest&maturedprocessFRD ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerSupply

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

MUR6080PT

UltraFastRecoveryDiodes

FEATURES *InternationalstandardpackageJEDECTO-247AD *Planarpassivatedchips *Veryshortrecoverytime *Extremelylowswitchinglosses *LowIRM-values *Softrecoverybehaviour APPLICATIONS *Rectifiersinswitchmodepowersupplies(SMPS) *Uninterruptiblepowersupplies(UPS)

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MUR6080PT

UltraFastRecoveryDiodes

SIRECTSirectifier Global Corp.

矽萊克半導(dǎo)體深圳市矽萊克半導(dǎo)體有限公司

MUR6080PT

UltraFastRecoveryDiodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MUR6080PT

60.0AmpereHeatsinkDualCommonCathodeUltraFastRecoveryRectifiers

Features ※ThinkiSemilatest&maturedprocessFRD ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerSupply

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

NCE6080

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE6080A

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6.5mΩ(typical)@VGS=10V RDS(ON)=7.5mΩ(typical)@VGS=4.5V ●Highdensityce

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE6080AI

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080AIusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

NCE6080AK

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6mΩ(typical)@VGS=10V RDS(ON)=7mΩ(typical)@VGS=4.5V ●Highdensitycell

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無(wú)錫新潔能股份無(wú)錫新潔能股份有限公司

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69820
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22+
6000
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12300
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更多MUR6080PL供應(yīng)商 更新時(shí)間2025-3-8 15:58:00

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