| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
MWS | Adustable Elastic Fabric(Standard Performance) | 3M 3M Electronics | 3M | |
MWS | High Voltage | ILLINOISCAPACITORIllinois Capacitor, Inc. 伊利諾斯伊利諾斯電容器股份有限公司 | ILLINOISCAPACITOR | |
20W Standard Package DESCRIPTION MWSDC/DCconvertersprovideupto20wattsofoutputpowerinanindustry-standardpackageandfootprint.TheMWSisavailableineither24Vor48Vinputversions.Withamaximumcasetemperatureof100°C,theMWSiswellsuitedforthemostdemandingtelecom,networking,andindustr | POWER-ONE Power-One | POWER-ONE | ||
20W Standard Package DESCRIPTION MWSDC/DCconvertersprovideupto20wattsofoutputpowerinanindustry-standardpackageandfootprint.TheMWSisavailableineither24Vor48Vinputversions.Withamaximumcasetemperatureof100°C,theMWSiswellsuitedforthemostdemandingtelecom,networking,andindustr | POWER-ONE Power-One | POWER-ONE | ||
20W Standard Package DESCRIPTION MWSDC/DCconvertersprovideupto20wattsofoutputpowerinanindustry-standardpackageandfootprint.TheMWSisavailableineither24Vor48Vinputversions.Withamaximumcasetemperatureof100°C,theMWSiswellsuitedforthemostdemandingtelecom,networking,andindustr | POWER-ONE Power-One | POWER-ONE | ||
InGaP HBT Gain Block DESCRIPTION Thisgeneralpurposeamplifierisalowcost,broadbandRFICmanufacturedwithanInGaP/GaAsHeterojunctionBipolarTransistor(HBT)process(MOCVD).ThisRFICamplifierwasdesignedasaneasilycascadable50ohmgainblock.Thedeviceisself-containedwith50ohminputandoutputi | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
CMDA Power Amplifier DESCRIPTION TheMWSCDMAisahigh-efficiencylinearamplifiertargeting3Vmobilehandheldsystems.ThedeviceismanufacturedinanadvancedInGaP/GaAsHeterojunctionBipolarTransistor(HBT)RFICfabprocess.ItisdesignedforuseasafinalRFamplifierin3VCDMAandTDMAPCSbattery-power | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
InGaP HBT Gain Block DESCRIPTION Thisgeneralpurposeamplifierisalowcost,broadbandRFICmanufacturedwithanInGaP/GaAsHeterojunctionBipolarTransistor(HBT)process(MOCVD).ThisRFICamplifierwasdesignedasaneasilycascadable50ohmgainblock.Thedeviceisself-containedwith50ohminputandoutputi | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
InGaP HBT Gain Block DESCRIPTION Thisgeneralpurposeamplifierisalowcost,broadbandRFICmanufacturedwithanInGaP/GaAsHeterojunctionBipolarTransistor(HBT)process(MOCVD).ThisRFICamplifierwasdesignedasaneasilycascadable50ohmgainblock.Thedeviceisself-containedwith50ohminputandoutputi | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
CMDA Power Amplifier DESCRIPTION TheMWSCDMAisahigh-efficiencylinearamplifiertargeting3Vmobilehandheldsystems.ThedeviceismanufacturedinanadvancedInGaP/GaAsHeterojunctionBipolarTransistor(HBT)RFICfabprocess.ItisdesignedforuseasafinalRFamplifierin3VCDMAandTDMAPCSbattery-power | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
W-CMDA Power Amplifier DESCRIPTION TheMWSW-CDMAisahighefficiencylinearamplifiertargeting3Vmobilehandheldsystems.ThedeviceismanufacturedinanadvancedInGaP/GaAsHeterojunctionBipolarTransistor(HBT)RFICfabprocess.ItisdesignedforuseasafinalRFamplifierin3VW-CDMAandCDMA2000,spreadsp | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
W-CMDA Power Amplifier DESCRIPTION TheMWSW-CDMAisahighefficiencylinearamplifiertargeting3Vmobilehandheldsystems.ThedeviceismanufacturedinanadvancedInGaP/GaAsHeterojunctionBipolarTransistor(HBT)RFICfabprocess.ItisdesignedforuseasafinalRFamplifierin3VW-CDMAandCDMA2000,spreadsp | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
W-CMDA Power Amplifier DESCRIPTION TheMWSW-CDMAisahighefficiencylinearamplifiertargeting3Vmobilehandheldsystems.ThedeviceismanufacturedinanadvancedInGaP/GaAsHeterojunctionBipolarTransistor(HBT)RFICfabprocess.ItisdesignedforuseasafinalRFamplifierin3VW-CDMAandCDMA2000,spreadsp | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | Intersil Intersil Corporation | Intersil | ||
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | Intersil Intersil Corporation | Intersil | ||
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | Intersil Intersil Corporation | Intersil | ||
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | Intersil Intersil Corporation | Intersil | ||
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | Intersil Intersil Corporation | Intersil | ||
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | Intersil Intersil Corporation | Intersil | ||
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | Intersil Intersil Corporation | Intersil |
詳細(xì)參數(shù)
- 型號(hào)：
MWS
- 功能描述：
防靜電控制產(chǎn)品 WRIST STRAP ELASTIC BROWN ADJUSTABLE
- RoHS：
否
- 制造商：
3M Electronic Specialty
- 產(chǎn)品：
Air Ionizers
- 類(lèi)型：
Mini
- 大?。?/span>
4.5 in x 3.3 in x 2 in
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
rca |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢(xún)價(jià) | ||
2000 |
7 |
詢(xún)價(jià) | |||||
SUNLORD |
24+ |
con |
6 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格https://www.jbchip.com/index |
詢(xún)價(jià) | ||
SHENZHEN SUNLORD ELECTRONICS |
22+ |
N/A |
102660 |
原裝原裝原裝 |
詢(xún)價(jià) | ||
SUNLORD |
24+ |
SMD |
65300 |
一級(jí)代理/放心購(gòu)買(mǎi)! |
詢(xún)價(jià) | ||
HAR |
2020+ |
DIP |
4500 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
IPD |
18+ |
MODULE |
65 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢(xún)價(jià) | ||
24+ |
DIP |
2700 |
全新原裝自家現(xiàn)貨優(yōu)勢(shì)! |
詢(xún)價(jià) | |||
HARRIS/哈里斯 |
QQ咨詢(xún) |
CDIP |
428 |
全新原裝 研究所指定供貨商 |
詢(xún)價(jià) | ||
SUNLORD |
5903 |
詢(xún)價(jià) |
相關(guān)規(guī)格書(shū)
更多- MWS5101D
- MX-2269
- MX-3013
- MX-3198
- MX-3240
- MX3256
- MX-3260
- MX-3364
- MX-3370
- MX-3379
- MX-3393
- MX-3452
- MX-3545
- MX-3587
- MX-3634
- MX-3948
- MX-3977
- MX-3979
- MX-4313
- MX-4339
- MX-4376
- MX-4465
- MX-4478
- MX-4542
- MX-4821
- MX-4969
- MX-5200
- MX-5201
- MX-5202
- MX-5280
- MX-5367
- MX-5389
- MX-5429
- MX-5436
- MX-5475
- MX5560
- MX-5595
- MX-5679
- MX-6092
- MX-6159
- MX-6387
- MX-6452
- MX-6829
- MXC1312A
- MZT33-01
相關(guān)庫(kù)存
更多- MWS5101E
- MX-2273
- MX3139
- MX-3235
- MX-3243
- MX-3256
- MX3336
- MX-3369
- MX-3372
- MX-3389
- MX-3399
- MX-3540
- MX3587
- MX3634
- MX-3808
- MX-3976
- MX3979
- MX-4295
- MX-4314
- MX4340
- MX-4404
- MX-4476
- MX-4479
- MX-4712
- MX-4875
- MX-4974
- MX5201
- MX5202
- MX-5279
- MX-5281
- MX-5375
- MX-5421
- MX-5430
- MX-5451
- MX-5476
- MX-5594
- MX-5596
- MX5741
- MX-6093
- MX-6160
- MX-6406
- MX-6536
- MXC-1312
- MXF-5375
- N4000
