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NDB6020

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheselogiclevelN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingNationalsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingper

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

NDB6020

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=35A@TC=25℃ ·DrainSourceVoltage-VDSS=20V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDB6020P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheselogiclevelP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

NDB6020P

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-24A@TC=25℃ ·DrainSourceVoltage-VDSS=-20V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDP6020

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheselogiclevelN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingNationalsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingper

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

NDP6020

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=35A@TC=25℃ ·DrainSourceVoltage-VDSS=20V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDP6020P

P-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?100RgTested ?100UISTested APPLICATIONS ?LoadSwitch ?NotebookAdaptorSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

NDP6020P

P-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheselogiclevelP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

NDP6020P

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-24A@TC=25℃ ·DrainSourceVoltage-VDSS=-20V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NI6020E

Full-FeaturedESeriesMultifunctionDAQ12or16-Bit,upto1.25MS/s,upto64AnalogInputs

NI

National Instruments Inc.

詳細參數(shù)

  • 型號：

    NDB6020

  • 功能描述：

    MOSFET DISC BY MFG 2/02

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
NSC
05+
原廠原裝
412
只做全新原裝真實現(xiàn)貨供應
 詢價
24+
3000
公司存貨
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
NS
23+
TO-263
8650
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
6000
面議
19
DIP/SMD
 詢價
NS/國半
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NS/國半
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NS
21+
TO-263
10000
原裝現(xiàn)貨假一罰十
 詢價
MOT/ON
22+
TO-
6000
十年配單,只做原裝
 詢價
NS/國半
2048+
TO-263
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
更多NDB6020供應商 更新時間2025-3-31 16:33:00

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