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NDB6020

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheselogiclevelN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingNationalsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingper

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB6020

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=35A@TC=25℃ ·DrainSourceVoltage-VDSS=20V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDB6020P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheselogiclevelP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDB6020P

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-24A@TC=25℃ ·DrainSourceVoltage-VDSS=-20V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDP6020

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheselogiclevelN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingNationalsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingper

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDP6020

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=35A@TC=25℃ ·DrainSourceVoltage-VDSS=20V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDP6020P

P-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?100RgTested ?100UISTested APPLICATIONS ?LoadSwitch ?NotebookAdaptorSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

NDP6020P

P-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheselogiclevelP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NDP6020P

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-24A@TC=25℃ ·DrainSourceVoltage-VDSS=-20V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NI6020E

Full-FeaturedESeriesMultifunctionDAQ12or16-Bit,upto1.25MS/s,upto64AnalogInputs

NI

National Instruments Inc.

詳細(xì)參數(shù)

  • 型號(hào)：

    NDB6020

  • 功能描述：

    MOSFET DISC BY MFG 2/02

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NSC
05+
原廠原裝
412
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
24+
3000
公司存貨
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
NS
23+
TO-263
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
6000
面議
19
DIP/SMD
 詢價(jià)
MOT/ON
23+
TO-
10000
公司只做原裝正品
 詢價(jià)
NS/國(guó)半
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
NS/國(guó)半
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
NS
21+
TO-263
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
NS/國(guó)半
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
更多NDB6020供應(yīng)商 更新時(shí)間2025-1-22 10:32:00

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