首頁 >NDD02N60ZT4G>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NDD02N60ZT4G | N-Channel Power MOSFET 600 V, 4.0 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NDD02N60ZT4G | N-Channel Power MOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NDD02N60ZT4G | N-Channel 650V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | |
NDD02N60ZT4G | N-Channel MOSFET uses advanced trench technology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER |
詳細(xì)參數(shù)
- 型號:
NDD02N60ZT4G
- 功能描述:
MOSFET NFET IPAK 600V 2.2A 4.8R
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
TO-252 |
113400 |
詢價(jià) | |||
ON/安森美 |
21+ |
6000 |
原裝正品 |
詢價(jià) | |||
ONSEMI/安森美 |
23+ |
DPAK-3 |
360000 |
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價(jià)格低 |
詢價(jià) | ||
ON |
11+ |
2500 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | |||
O |
24+ |
TO-252 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
ON |
1728+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
ON |
23+ |
TO-252 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
ON |
22+23+ |
TO-252 |
27190 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
ON/安森美 |
11+ |
TO-252 |
77 |
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十 |
詢價(jià) |
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