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NE4210S01-T1

X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE4210S01-T1

SUPER LOW NOISE HJ FET

DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown

CEL

California Eastern Labs

NE4210S01-T1

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE4210S01-T1B

X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE4210S01-T1B

SUPER LOW NOISE HJ FET

DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown

CEL

California Eastern Labs

NE4210S01-T1B

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE4210S01-T1B

Package：4-SMD；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：HJ-FET 13DB S01

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號：

    NE4210S01-T1

  • 制造商：

    Renesas Electronics Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS
2016+
SMT-86
6000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
RENESAS
SMT-86
10265
提供BOM表配單只做原裝貨值得信賴
 詢價
NEC
1742+
SMT
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
 詢價
SMD
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
RENESAS/瑞薩
12+PB
SMT-86
90
向鴻原裝正品/代理渠道/現(xiàn)貨優(yōu)勢
 詢價
NEC
2023+
SMD
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
NEC?
24+
DIP
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!
 詢價
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費送樣
 詢價
RENESAS/瑞薩
21+
SMT-86
10000
原裝現(xiàn)貨假一罰十
 詢價
RENESAS/瑞薩
22+
SMT-86
8650
原裝現(xiàn)貨假一賠十
 詢價
更多NE4210S01-T1供應(yīng)商 更新時間2025-1-18 22:58:00

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