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NE4210S01-T1B

X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE4210S01-T1B

SUPER LOW NOISE HJ FET

DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown

CEL

California Eastern Labs

NE4210S01-T1B

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE4210S01-T1B

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：4-SMD 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：HJ-FET 13DB S01

CEL

California Eastern Labs

NE4210S01-T1

HETEROJUNCTIONFIELDEFFECTTRANSISTOR

DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE4210S01-T1

SUPERLOWNOISEHJFET

DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown

CEL

California Eastern Labs

NE4210S01-T1

XtoKuBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET

DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

產(chǎn)品屬性

  • 產(chǎn)品編號：

    NE4210S01-T1B

  • 制造商：

    CEL

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻

  • 包裝：

    卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶

  • 晶體管類型：

    HFET

  • 頻率：

    12GHz

  • 增益：

    13dB

  • 額定電流（安培）：

    15mA

  • 噪聲系數(shù)：

    0.5dB

  • 封裝/外殼：

    4-SMD

  • 供應(yīng)商器件封裝：

    SMD

  • 描述：

    HJ-FET 13DB S01

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
RENESAS/瑞薩
24+
SMT86
127
只做原廠渠道 可追溯貨源
 詢價(jià)
RENESAS
21+
VQFN
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價(jià)
NEC
2024+
SMT-86
32560
原裝優(yōu)勢絕對有貨
 詢價(jià)
NEC
23+
SO86
23290
全新原裝現(xiàn)貨特價(jià)銷售,歡迎來電查詢
 詢價(jià)
NEC
2021+
SMT-86
12000
詢價(jià)
24+
3000
公司存貨
 詢價(jià)
原廠正品
23+
SMT
5000
原裝正品,假一罰十
 詢價(jià)
NEC
23+
DO-4
18689
詢價(jià)
NEC
23+
原廠封裝
9980
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價(jià)
NEC
2016+
SMT86
9000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
更多NE4210S01-T1B供應(yīng)商 更新時(shí)間2024-11-15 11:04:00

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