NE425S01中文資料CEL數(shù)據(jù)手冊PDF規(guī)格書
NE425S01規(guī)格書詳情
DESCRIPTION
The NE425S01 is a Hetero-Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and other commercial applications.
NECs stringent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
? SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz
? HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz
? GATE LENGTH: ≤ 0.20 μm
? GATE WIDTH: 200 μm
? LOW COST PLASTIC PACKAGE
產(chǎn)品屬性
- 型號:
NE425S01
- 功能描述:
射頻GaAs晶體管 Super Lo Noise HJFET
- RoHS:
否
- 制造商:
TriQuint Semiconductor
- 技術(shù)類型:
pHEMT
- 頻率:
500 MHz to 3 GHz
- 增益:
10 dB
- 噪聲系數(shù):
正向跨導(dǎo)
- gFS(最大值/最小值):
4 S 漏源電壓
- 閘/源擊穿電壓:
- 8 V
- 漏極連續(xù)電流:
3 A
- 最大工作溫度:
+ 150 C
- 功率耗散:
10 W
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
NEC |
23+ |
SO86 |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價(jià) | ||
NEC |
24+ |
N/A |
4897 |
絕對原裝!現(xiàn)貨熱賣! |
詢價(jià) | ||
NEC |
2003 |
SO86 |
464 |
詢價(jià) | |||
NEC |
23+ |
NA |
10436 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
NEC |
6000 |
面議 |
19 |
SO86 |
詢價(jià) | ||
NEC |
24+ |
SO86 |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
NEC |
23+ |
SO86 |
999999 |
原裝正品現(xiàn)貨量大可訂貨 |
詢價(jià) | ||
NEC |
23+ |
NA/ |
2000 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
NEC |
1742+ |
SMT |
98215 |
只要網(wǎng)上有絕對有貨!只做原裝正品! |
詢價(jià) | ||
NEC |
22+23+ |
SO86 |
29176 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價(jià) |