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NE5520379A

SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FORGSM/DCSDUAL-BANDPHONETRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520379AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for3.2VGSM900handsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520379A-T1

Marking:A3;Package:79A;SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FORGSM/DCSDUAL-BANDPHONETRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520379AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for3.2VGSM900handsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520379A-T1A

Marking:A3;Package:79A;SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FORGSM/DCSDUAL-BANDPHONETRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520379AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for3.2VGSM900handsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520379A-T1A-A

NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION NECsNE5520379AisanN-ChannelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifierfor3.2VGSM900handsets.DiearemanufacturedusingNECsNEWMOStechnology(NECs0.6μmWSigatelateralMOSFET)andhousedinasurfacemountpackage.Thisdevicecandeliver

CEL

California Eastern Labs

NE5521

LVDT signal conditioner

DESCRIPTION TheNE/SA/SE5521isasignalconditioningcircuitforusewithLinearVariableDifferentialTransformers(LVDTs)andRotaryVariableDifferentialTransformers(RVDTs).Thechipincludesalowdistortion,amplitude-stablesinewaveoscillatorwithprogrammablefrequencytodrivethe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

NE5521D

LVDT signal conditioner

DESCRIPTION TheNE/SA/SE5521isasignalconditioningcircuitforusewithLinearVariableDifferentialTransformers(LVDTs)andRotaryVariableDifferentialTransformers(RVDTs).Thechipincludesalowdistortion,amplitude-stablesinewaveoscillatorwithprogrammablefrequencytodrivethe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

NE5521N

LVDT signal conditioner

DESCRIPTION TheNE/SA/SE5521isasignalconditioningcircuitforusewithLinearVariableDifferentialTransformers(LVDTs)andRotaryVariableDifferentialTransformers(RVDTs).Thechipincludesalowdistortion,amplitude-stablesinewaveoscillatorwithprogrammablefrequencytodrivethe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

NE552R479A

SILICON POWER MOS FET

3.0VOPERATIONSILICONRFPOWERLDMOSFET FOR2.45GHz0.4WTRANSMISSIONAMPLIFIERS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE552R479A-T1

SILICON POWER MOS FET

3.0VOPERATIONSILICONRFPOWERLDMOSFET FOR2.45GHz0.4WTRANSMISSIONAMPLIFIERS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE552R479A-T1A

SILICON POWER MOS FET

3.0VOPERATIONSILICONRFPOWERLDMOSFET FOR2.45GHz0.4WTRANSMISSIONAMPLIFIERS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    NE55

  • 制造商:

    NEC

  • 制造商全稱(chēng):

    NEC

  • 功能描述:

    SILICON POWER MOS FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
23+
SMD
12000
全新原裝優(yōu)勢(shì)
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ON
2016+
SOP
3900
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
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ENC
23+
DIP
5000
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PHILIPS
95+
SOP16P
100
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TI
24+
NA
5825
公司原廠(chǎng)原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
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TI
22+
DIP8
5000
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23+
65480
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TEXASINSTRUMENTS
1030
全新原裝 貨期兩周
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TI
25+
SOP-8
7500
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23+
12000
全新原裝的現(xiàn)貨
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更多NE55供應(yīng)商 更新時(shí)間2025-4-22 10:49:00