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NE5517DR2G

Dual Operational Transconductance Amplifier

TheAU5517andNE5517containtwocurrent-controlledtransconductanceamplifiers,eachwithadifferentialinputandpush-pulloutput.TheAU5517/NE5517offerssignificantdesignandperformanceadvantagesoversimilardevicesforalltypesofprogrammablegainapplications.Circuitperformanceis

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NE5517N

Dual operational transconductance amplifier

DESCRIPTION TheAU5517andNE5517containtwocurrent-controlledtransconductanceamplifiers,eachwithadifferentialinputandpush-pulloutput.TheAU5517/NE5517offerssignificantdesignandperformanceadvantagesoversimilardevicesforalltypesofprogrammablegainapplications.Circuitp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

NE5517N

Dual Operational Transconductance Amplifier

TheAU5517andNE5517containtwocurrent-controlledtransconductanceamplifiers,eachwithadifferentialinputandpush-pulloutput.TheAU5517/NE5517offerssignificantdesignandperformanceadvantagesoversimilardevicesforalltypesofprogrammablegainapplications.Circuitperformanceis

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NE5517NG

Dual Operational Transconductance Amplifier

TheAU5517andNE5517containtwocurrent-controlledtransconductanceamplifiers,eachwithadifferentialinputandpush-pulloutput.TheAU5517/NE5517offerssignificantdesignandperformanceadvantagesoversimilardevicesforalltypesofprogrammablegainapplications.Circuitperformanceis

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NE5520279A

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthetransmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2technology(ourWSigatelaterallydiffusedMOSFET)andhousedinasurfacemountpackage

CEL

California Eastern Labs

NE5520279A

SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz1.6WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthe transmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520279A-T1

Marking：A2；Package：79A；SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz1.6WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthe transmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520279A-T1A

Marking：A2；Package：79A；SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz1.6WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthe transmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520279A-T1-A

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthetransmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2technology(ourWSigatelaterallydiffusedMOSFET)andhousedinasurfacemountpackage

CEL

California Eastern Labs

NE5520379A

NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION NECsNE5520379AisanN-ChannelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifierfor3.2VGSM900handsets.DiearemanufacturedusingNECsNEWMOStechnology(NECs0.6μmWSigatelateralMOSFET)andhousedinasurfacemountpackage.Thisdevicecandeliver

CEL

California Eastern Labs

替換型號

詳細參數(shù)

  • 型號：

    NE55

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    SILICON POWER MOS FET

供應商型號品牌批號封裝庫存備注價格
ST
23+
原廠封裝
13528
振宏微原裝正品,假一罰百
 詢價
NEC
23+
SMD
12000
全新原裝優(yōu)勢
 詢價
S
24+
DIP-8
66800
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！
 詢價
ENC
23+
DIP
5000
原裝正品,假一罰十
 詢價
TI/德州儀器
23+
SOP-8
90000
原裝現(xiàn)貨 只做正品
 詢價
TI
24+
NA
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
TI
10+
SOP8
26017
原盤現(xiàn)貨/2500
 詢價
23+
65480
詢價
NA
2022+
211
全新原裝 貨期兩周
 詢價
TI
15+13+
SOP8
270
全新原裝現(xiàn)貨
 詢價
更多NE55供應商 更新時間2025-4-21 17:01:00

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