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NE651R479A

0.4 W L-BAND POWER GaAs HJ-FET

DESCRIPTION TheNE651R479Aisa0.4WGaAsHJ-FETdesignedformiddlepowertransmitterapplicationsformobilecommunicationandwirelessPCLANsystems.Itiscapableofdelivering0.4Wofoutputpower(CW)withhighlineargain,highefficiencyandexcellentdistortionandasadriveramplifi

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE651R479A

MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECsNE651R479AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering0.5Wattsofoutputpower(CW)at3.5V,and1Wattofoutputpower(CW)at5

CEL

California Eastern Labs

NE651R479A

N-CHANNEL GaAs HJ-FET

0.4WL-BANDPOWERGaAsHJ-FET DESCRIPTION TheNE651R479Aisa0.4WGaAsHJ-FETdesignedformiddlepowertransmitterapplicationsformobile communicationandwirelessPCLANsystems.Itiscapableofdelivering0.4Wofoutputpower(CW)withhighlineargain,highefficiencyandexcellent

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE651R479A-A

MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECsNE651R479AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering0.5Wattsofoutputpower(CW)at3.5V,and1Wattofoutputpower(CW)at5

CEL

California Eastern Labs

NE651R479A-T1

0.4 W L-BAND POWER GaAs HJ-FET

DESCRIPTION TheNE651R479Aisa0.4WGaAsHJ-FETdesignedformiddlepowertransmitterapplicationsformobilecommunicationandwirelessPCLANsystems.Itiscapableofdelivering0.4Wofoutputpower(CW)withhighlineargain,highefficiencyandexcellentdistortionandasadriveramplifi

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE651R479A-T1

N-CHANNEL GaAs HJ-FET

0.4WL-BANDPOWERGaAsHJ-FET DESCRIPTION TheNE651R479Aisa0.4WGaAsHJ-FETdesignedformiddlepowertransmitterapplicationsformobile communicationandwirelessPCLANsystems.Itiscapableofdelivering0.4Wofoutputpower(CW)withhighlineargain,highefficiencyandexcellent

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE651R479A-T1-A

MEDIUM POWER GaAs HJ-FET

DESCRIPTION NECsNE651R479AisaGaAsHJ-FETdesignedformediumpowermobilecommunications,FixedWirelessAccess,ISM,WLL,PCS,IMT-2000,andMMDStransmitterandsubscriberapplications.Itiscapableofdelivering0.5Wattsofoutputpower(CW)at3.5V,and1Wattofoutputpower(CW)at5

CEL

California Eastern Labs

NE651R479A-EVPW19

包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評(píng)估和開發(fā)套件，開發(fā)板 描述：EVAL BOARD NE651R479A 1.9GHZ

CEL

California Eastern Labs

NE651R479A-EVPW24

包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評(píng)估和開發(fā)套件，開發(fā)板 描述：EVAL BOARD NE651R479A 2.4GHZ

CEL

California Eastern Labs

NE651R479A-EVPW35

包裝：散裝 類別：開發(fā)板，套件，編程器 射頻評(píng)估和開發(fā)套件，開發(fā)板 描述：EVAL BOARD NE651R479A 3.5GHZ

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號(hào)：

    NE651R479A

  • 功能描述：

    射頻GaAs晶體管 L&S Band GaAs HJFET

  • RoHS：

    否

  • 制造商：

    TriQuint Semiconductor

  • 技術(shù)類型：

    pHEMT

  • 頻率：

    500 MHz to 3 GHz

  • 增益：

    10 dB

  • 噪聲系數(shù)：

    正向跨導(dǎo)

  • gFS（最大值/最小值）：

    4 S 漏源電壓

  • 閘/源擊穿電壓：

    - 8 V

  • 漏極連續(xù)電流：

    3 A

  • 最大工作溫度：

    + 150 C

  • 功率耗散：

    10 W

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
新
9
全新原裝 貨期兩周
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NEC
23+
TO-59
8510
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
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CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
NEC
24+
79A
2600
原裝現(xiàn)貨假一賠十
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NEC
23+
26520
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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NEC
24+
17704
詢價(jià)
NEC
2016+
SMT-86
6000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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CEL
24+
原廠原封
4000
原裝正品
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NEC
24+
SMT-86
5000
全現(xiàn)原裝公司現(xiàn)貨
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NEC
SMT-86
10265
提供BOM表配單只做原裝貨值得信賴
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更多NE651R479A供應(yīng)商 更新時(shí)間2025-2-26 16:05:00

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