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NESG2101M05

NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPNSiGeRFTransistorforMediumOutputPowerAmplification(125mW) Flat-Lead4-PinThin-TypeSuperMinimold(M05) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,high-gainamplification ?PO(1dB)=21dBmTYP.@V

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2101M05

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

DESCRIPTION NECsNESG2101M05isfabricatedusingNECshighvoltageSiliconGermaniumprocess(UHS2-HV),andisdesignedforawiderangeofapplicationsincludinglownoiseamplifiers,mediumpoweramplifiers,andoscillators NECslowprofile,flatleadstyleM05Packageprovideshighfrequencyp

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG2101M05

NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

NESG2101M05-A

NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPNSiGeRFTransistorforMediumOutputPowerAmplification(125mW) Flat-Lead4-PinThin-TypeSuperMinimold(M05) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,high-gainamplification ?PO(1dB)=21dBmTYP.@V

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2101M05-T1

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

DESCRIPTION NECsNESG2101M05isfabricatedusingNECshighvoltageSiliconGermaniumprocess(UHS2-HV),andisdesignedforawiderangeofapplicationsincludinglownoiseamplifiers,mediumpoweramplifiers,andoscillators NECslowprofile,flatleadstyleM05Packageprovideshighfrequencyp

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG2101M05-T1

NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPNSiGeRFTransistorforMediumOutputPowerAmplification(125mW) Flat-Lead4-PinThin-TypeSuperMinimold(M05) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,high-gainamplification ?PO(1dB)=21dBmTYP.@V

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2101M05-T1-A

NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW

NPNSiGeRFTransistorforMediumOutputPowerAmplification(125mW) Flat-Lead4-PinThin-TypeSuperMinimold(M05) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,high-gainamplification ?PO(1dB)=21dBmTYP.@V

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2101M05-T1-A

NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

NESG2101M05-A

包裝：卷帶（TR）剪切帶（CT） 封裝/外殼：SOT-343F 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：RF TRANS NPN 5V 17GHZ M05

CEL

California Eastern Labs

NESG2101M05-EVPW24

包裝：盒 類別：開發(fā)板，套件，編程器 射頻評(píng)估和開發(fā)套件，開發(fā)板 描述：EVAL BOARD NESG2101M05 2.4GHZ

CEL

California Eastern Labs

NESG2101M05-EVPW24-A

包裝：盒 類別：開發(fā)板，套件，編程器 射頻評(píng)估和開發(fā)套件，開發(fā)板 描述：EVAL BOARD NESG2101M05

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號(hào)：

    NESG2101M05

  • 功能描述：

    射頻硅鍺晶體管 NPN SiGe High Freq

  • RoHS：

    否

  • 制造商：

    Infineon Technologies 發(fā)射極 - 基極電壓

  • 封裝：

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
2015+
50
公司現(xiàn)貨庫(kù)存
 詢價(jià)
NEC
2019+
SOT-343
78550
原廠渠道 可含稅出貨
 詢價(jià)
CEL
2024+
SOT-343
32560
原裝優(yōu)勢(shì)絕對(duì)有貨
 詢價(jià)
NEC
2024
SOT-343
502911
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應(yīng)商
 詢價(jià)
NEC
23+
SOT-343
1000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量?jī)r(jià)格低
 詢價(jià)
NEC
17+
SOT343
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
NEC
24+
SOT-343SOT-323-4
87200
新進(jìn)庫(kù)存/原裝
 詢價(jià)
NEC
23+
SOT343
6680
全新原裝優(yōu)勢(shì)
 詢價(jià)
NEC
16+
SOT343
10000
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
 詢價(jià)
RENESAS
19+
SOT343
87069
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
更多NESG2101M05供應(yīng)商 更新時(shí)間2025-1-4 16:00:00

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