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NGTB40N65IHRWG

IGBT with Monolithic Reverse Conducting Diode

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NGTB40N65IHRWG

包裝：管件 封裝/外殼：TO-247-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT FIELD STOP 650V 80A TO247

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

DAM40N65H

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

FGA40N65SMD

NewProducts,TipsandToolsforPowerandMobileApplications

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGA40N65SMD

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGA40N65SMD

FieldStopIGBT650V,40A

GeneralDescription UsingnovelfieldstopIGBTtechnology,onsemi’snewseriesof fieldstop2ndgenerationIGBTsoffertheoptimumperformancefor solarinverter,UPS,welder,inductionheating,telecom,ESSandPFC applicationswherelowconductionandswitchinglossesareessential. Featu

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGH40N65UFD

650V,40AFieldStopIGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild?’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowSaturationVoltage:VCE

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH40N65UFDTU

650V,40AFieldStopIGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild?’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowSaturationVoltage:VCE

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH40N65UFDTU

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH40N65UFDTU

IGBT-FieldStop650V,40A

Description UsingnovelfieldstopIGBTtechnology,ONSemiconductor’sfield stopIGBTsoffertheoptimumperformanceforAutomotiveChargers, Inverter,andotherapplicationswherelowconductionandswitching lossesareessential. Features ?HighCurrentCapability ?LowSaturationVolt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HMG40N65T

650V40Atrenchgatefieldcut-offtypeIGBT

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HMS40N65T

650VN-ChannelsuperjunctionMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

KGF40N65KDC

SEMICONDUCTOR

KECKEC CORPORATION

KEC株式會社

MIW40N65RA

TrenchandFieldStopIGBT650V40A

Features ?Lowswitchinglosses ?Maximumjunctiontemperature175°C ?Positivetemperaturecoefficient ?Highruggedness,temperaturestable ?Highshortcircuitcapability(5μs) ?HalogenFree.“Green”Device(Note1) ?EpoxyMeetsUL94V-0FlammabilityRating ?LeadFreeFinish/RoHSCom

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MIW40N65RA-BP

TrenchandFieldStopIGBT650V40A

Features ?Lowswitchinglosses ?Maximumjunctiontemperature175°C ?Positivetemperaturecoefficient ?Highruggedness,temperaturestable ?Highshortcircuitcapability(5μs) ?HalogenFree.“Green”Device(Note1) ?EpoxyMeetsUL94V-0FlammabilityRating ?LeadFreeFinish/RoHSCom

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

NGTB40N65IHRTG

IGBTwithMonolithicReverseConductingDiode

ThisInsulatedGateBipolarTransistor(IGBT)featuresrobustand costeffectiveFieldStop(FS2)trenchconstructionwithamonolithic RCDiode.ItprovidesacosteffectiveSolutionforapplicationswhere diodelossesareminimal.TheIGBTisoptimizedforlowconduction losses(lowVCEsat)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PE40N65

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    NGTB40N65IHRWG

  • 制造商：

    onsemi

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • IGBT 類型：

    場截止

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    1.7V @ 15V，40A

  • 開關(guān)能量：

    420μJ（關(guān)）

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 測試條件：

    400V，40A，10 歐姆，15V

  • 工作溫度：

    -40°C ~ 175°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應(yīng)商器件封裝：

    TO-247-3

  • 描述：

    IGBT FIELD STOP 650V 80A TO247

供應(yīng)商型號品牌批號封裝庫存備注價格
三年內(nèi)
1983
只做原裝正品
 詢價
ON
1809+
TO-247
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
ON
21+
NA
3000
進口原裝 假一罰十 現(xiàn)貨
 詢價
ON/安森美
21+
NA
12820
只做原裝,質(zhì)量保證
 詢價
ON Semiconductor
22+
TO247
9000
原廠渠道,現(xiàn)貨配單
 詢價
ON/安森美
22+
N/A
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價
ON
21+
NA
3000
進口原裝 假一罰十 現(xiàn)貨
 詢價
ON Semiconductor
23+
TO247
9000
原裝正品，支持實單
 詢價
ON/安森美
23+
NA
25630
原裝正品
 詢價
ON/安森美
NA
275000
一級代理原裝正品,價格優(yōu)勢,長期供應(yīng)!
 詢價
更多NGTB40N65IHRWG供應(yīng)商 更新時間2025-1-5 11:08:00

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