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NP24N10CLB

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistordesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=80mΩMAX.(VGS=10V,ID=12A) RDS(on)2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP24N10DLB

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistordesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=80mΩMAX.(VGS=10V,ID=12A) RDS(on)2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP24N10ELB

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistordesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=80mΩMAX.(VGS=10V,ID=12A) RDS(on)2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP28N10SDE

MOS FIELD EFFECT TRANSISTOR

Description TheNP28N10SDEisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)1=52mΩMAX.(VGS=10V,ID=14A) RDS(on)2=59mΩMAX.(VGS=4.5V,ID=14A) ?LowCiss:Ciss=2200pFTYP.(VDS=2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP28N10SDE

N-Channel 100-V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

NP28N10SDE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=28A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=52mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP28N10SDE-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP28N10SDEisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)1=52mΩMAX.(VGS=10V,ID=14A) RDS(on)2=59mΩMAX.(VGS=4.5V,ID=14A) ?LowCiss:Ciss=2200pFTYP.(VDS=2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP28N10SDE-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP28N10SDEisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)1=52mΩMAX.(VGS=10V,ID=14A) RDS(on)2=59mΩMAX.(VGS=4.5V,ID=14A) ?LowCiss:Ciss=2200pFTYP.(VDS=2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP2S

Satellite Zero IF QPSK Tuner IC

Description TheSL1925isawidebandquadratureconverteroperatingfrom950to2150MHz,intendedprimarilyforapplicationinsatellitetuners. Thedevicecontainsallelementsnecessary,withtheexceptionoflocaloscillatorsustainingnetwork,tofabricateahighperformanceI(n-phase)&

Mitel

Mitel Corporation

NP2T

Satellite Zero IF QPSK Tuner IC

Description TheSL1925isawidebandquadratureconverteroperatingfrom950to2150MHz,intendedprimarilyforapplicationinsatellitetuners. Thedevicecontainsallelementsnecessary,withtheexceptionoflocaloscillatorsustainingnetwork,tofabricateahighperformanceI(n-phase)&

Mitel

Mitel Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    NP2

  • 制造商：

    Hubbell Premise Wiring

  • 功能描述：

    WALLPLATE, 2-G, 2) TOGG, BR

  • 制造商：

    Hubbell Wiring Device-Kellems

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
正泰
24+
N/A
2100
正泰全系列在售
 詢價(jià)
Radiant
24+
TQFP/80
2978
絕對(duì)原裝自家現(xiàn)貨!真實(shí)庫(kù)存!歡迎來(lái)電!
 詢價(jià)
ROCKWELL
00+
QFP80
1350
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢價(jià)
24+
QFP-128P
28
現(xiàn)貨
 詢價(jià)
ON
24+/25+
2500
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
NEC
1415+
TO-252
28500
全新原裝正品,優(yōu)勢(shì)熱賣(mài)
 詢價(jià)
RADIANT
23+
TQFP-80
550
專營(yíng)高頻管模塊,全新原裝!
 詢價(jià)
Radiant
24+
TQFP
6980
原裝現(xiàn)貨,可開(kāi)13%稅票
 詢價(jià)
RENESAS
2016+
QFN8
2742
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
 詢價(jià)
進(jìn)口原裝
23+
BGA
1008
優(yōu)勢(shì)庫(kù)存
 詢價(jià)
更多NP2供應(yīng)商 更新時(shí)間2025-4-21 17:26:00

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