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NP20P06YLG-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP20P06YLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=47m?MAX.(VGS=–10V,ID=–10A) RDS(on)=64m?MAX.(VGS=–5V,ID=–10A) RDS(on)=70m?MAX.(VGS=–4.5V,ID=–10A

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP20P06YLG-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP20P06YLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)=47m?MAX.(VGS=–10V,ID=–10A) RDS(on)=64m?MAX.(VGS=–5V,ID=–10A) RDS(on)=70m?MAX.(VGS=–4.5V,ID=–10A

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP22N055HHE

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=39m?MAX.(VGS=10V,ID=11A) ?LowCiss:Ciss=590pFTYP. ?Built-in

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP22N055HHE

N-Channel 60 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PowerSupply -SecondarySynchronousRectification ?DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

NP22N055HHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) ?LowC

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP22N055HHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=39mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP22N055HLE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=37mΩMAX.(VGS=10V,ID=11A) RDS(on)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP22N055HLE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP22N055IHE

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=39m?MAX.(VGS=10V,ID=11A) ?LowCiss:Ciss=590pFTYP. ?Built-in

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP22N055IHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistorsdesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=39mΩMAX.(VGS=10V,ID=11A) ?LowC

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    NP2

  • 制造商：

    Hubbell Premise Wiring

  • 功能描述：

    WALLPLATE, 2-G, 2) TOGG, BR

  • 制造商：

    Hubbell Wiring Device-Kellems

供應商型號品牌批號封裝庫存備注價格
正泰
24+
N/A
2100
正泰全系列在售
 詢價
Radiant
24+
TQFP/80
2978
絕對原裝自家現(xiàn)貨!真實庫存!歡迎來電!
 詢價
ROCKWELL
00+
QFP80
1350
全新原裝進口自己庫存優(yōu)勢
 詢價
24+
QFP-128P
28
現(xiàn)貨
 詢價
ON
24+/25+
2500
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
NEC
1415+
TO-252
28500
全新原裝正品,優(yōu)勢熱賣
 詢價
RADIANT
23+
TQFP-80
550
專營高頻管模塊,全新原裝!
 詢價
Radiant
24+
TQFP
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
RENESAS
2016+
QFN8
2742
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
進口原裝
23+
BGA
1008
優(yōu)勢庫存
 詢價
更多NP2供應商 更新時間2025-4-21 17:26:00

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