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50P06

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP50P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=?10V,ID=?25A) RDS(on)2=23mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

50P06

IscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

50P06

P-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

50P06

-50A,-60VP-CHANNEL(D-S)POWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

50P06

P-Channel60-V(D-S),175CMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

50P06

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

BR50P06

P-CHANNELMOSFETinaTO-220PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

FIR50P06PG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FQD50P06

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

HM50P06

P-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM50P06K

P-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM50P06K

P-channelEnhancementModePowerMOSFET

Features ?VDS=-60V,ID=-50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

ISC50P06

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-50A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=37mΩ(Max)@VGS=-10V DESCRIPTION ·Motorcontrolanddrive ·Batterymanagement ·GenaralPowerSwitching

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

LMAK50P06

P-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

ME50P06

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

NP50P06KDG

-60V–-50A–P-channelPowerMOSFETApplication:Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=17m?Max.(VGS=-10V,ID=-25A) RDS(on)=23m?Max.(VGS=-4.5V,ID=-25A) ?Lowinputcapacitance:Ciss=50

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP50P06KDG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP50P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17mΩMAX.(VGS=?10V,ID=?25A) RDS(on)2=23mΩMAX.(VGS=?4.5V,ID=?25A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP50P06SDG

-60V–-50A–P-channelPowerMOSFETApplication:Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=16.5m?Max.(VGS=-10V,ID=-25A) RDS(on)=23.0m?Max.(VGS=-4.5V,ID=-25A) ?Lowinputcapacitance:Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

SQD50P06

AutomotiveP-Channel60V(D-S)175?CMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SQM50P06

AutomotiveP-Channel60V(D-S)175?CMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NATLINEAR/南麟
23+
TO-252-2L
33000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
NEC
24+
TO-252
8866
詢價(jià)
NEC
12+
TO-252
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
詢價(jià)
NEC
23+
TO-252
11716
全新原裝
詢價(jià)
RENESAS
24+
TO-263
5000
只做原裝公司現(xiàn)貨
詢價(jià)
NEC
23+
TO-263
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
詢價(jià)
NEC
18+
TO-252
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價(jià)
Renesas
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
NEC
6000
面議
19
TO-252
詢價(jià)
Renesas
18+
TO-263
41200
原裝正品,現(xiàn)貨特價(jià)
詢價(jià)
更多NP50P06G供應(yīng)商 更新時(shí)間2025-1-11 11:09:00