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NP84N055KHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP84N055KHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP84N055KHE-E1-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP84N055KHE-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N055KHE-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N055KHE-E2-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) ?Lowinputcapacitance Ciss=4540pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP84N055KLE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP84N055KLE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=84A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP84N055KLE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) ?Lowinputcapacitance Ciss=6

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP84N055KLE-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) ?Lowinputcapacitance Ciss=6

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NP84

  • 制造商：

    NEC

  • 制造商全稱(chēng)：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

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