首頁(yè) >NP89N04>規(guī)格書列表

零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

NP89N04MUK

MOS FIELD EFFECT TRANSISTOR

Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.3m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04MUK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP89N04MUK-S18-AY

MOS FIELD EFFECT TRANSISTOR

Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.3m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04NUK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP89N04NUK-S18-AY

MOS FIELD EFFECT TRANSISTOR

Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=3.3m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04PDK

40 V – 90 A – N-channel Power MOS FET Application: Automotive

Description TheNP89N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.95m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedf

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04PDK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.95mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP89N04PDK-E1-AY

40 V – 90 A – N-channel Power MOS FET Application: Automotive

Description TheNP89N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.95m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedf

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04PDK-E2-AY

40 V – 90 A – N-channel Power MOS FET Application: Automotive

Description TheNP89N04PDKisN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.95m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Logicleveldrivetype ?Designedf

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP89N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.95m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP89N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.95m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04PUK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.95mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP89N04PUK_V01

MOS FIELD EFFECT TRANSISTOR

Description TheNP89N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.95m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP89N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.95m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP89N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.95m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP89N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.95m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP89N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.95m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04MUK

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04MUK_15

MOS FIELD EFFECT TRANSISTOR

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP89N04NUK

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    NP89N04

  • 制造商:

    RENESAS

  • 制造商全稱:

    Renesas Technology Corp

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
UTC/友順
23+
TO-252
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢價(jià)
NEC
23+
TO-220
10000
公司只做原裝正品
詢價(jià)
RENESAS/瑞薩
2022+
TO-220
32500
原廠代理 終端免費(fèi)提供樣品
詢價(jià)
NEC
23+
TO-220
6000
原裝正品,支持實(shí)單
詢價(jià)
RENESAS/瑞薩
23+
TO-220
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
詢價(jià)
RENESAS/瑞薩
2022+
TO-220
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
詢價(jià)
RENESAS/瑞薩
22+
TO-220
12500
瑞薩全系列在售,終端可出樣品
詢價(jià)
RENESAS/瑞薩
20+
TO-220
32500
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
詢價(jià)
RENESAS/瑞薩
22+
TO-220
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
詢價(jià)
NEC
24+
TO-TO-220
37650
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢價(jià)
更多NP89N04供應(yīng)商 更新時(shí)間2025-1-16 10:28:00