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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
NTD12N10G	文件：1.01012 Mbytes Page：7 Pages	N-Channel 100 V (D-S) MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
NTD12N10G	文件：148.34 Kbytes Page：8 Pages	Power MOSFET 12 Amps, 100 Volts	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
PHD12N10E	文件：298.39 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.16Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
PHD12N10E	文件：79.16 Kbytes Page：7 Pages	PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.ThedeviceisintendedforuseinSwitchedModePowerSupplies(SMPS),motorcontrol,welding,DC/DCandAC/DCconverters,andingeneralpurposeswitchingapplication	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHP12N10E	文件：72.09 Kbytes Page：7 Pages	PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelope.ThedeviceisintendedforuseinSwitchedModePowerSupplies(SMPS),motorcontrol,welding,DC/DCandAC/DCconverters,andingeneralpurposeswitchingapplications.	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
RFM12N10	文件：43.2 Kbytes Page：5 Pages	12A,80Vand100V,0.200Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These	Intersil Intersil Corporation	Intersil
RFM12N10	文件：99.52 Kbytes Page：2 Pages	12A,80Vand100V,0.200Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
RFM12N10	文件：99.52 Kbytes Page：2 Pages	12A,80Vand100V,0.200Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
RFM12N10L	文件：101.13 Kbytes Page：2 Pages	N-ChannelLogicLevelPowerField-EffectTransistors(L2FET) TheRFM12N08LandRFM12N10LandtheRFP12N08LandRFP12N10Laren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddriver	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
RFP12N10	文件：43.2 Kbytes Page：5 Pages	12A,80Vand100V,0.200Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These	Intersil Intersil Corporation	Intersil
RFP12N10	文件：99.52 Kbytes Page：2 Pages	12A,80Vand100V,0.200Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
RFP12N10	文件：99.52 Kbytes Page：2 Pages	12A,80Vand100V,0.200Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
RFP12N10L	文件：38.42 Kbytes Page：5 Pages	12A,100V,0.200Ohm,LogicLevel,N-ChannelPowerMOSFET TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitchingandsolenoiddrivers.Thisperformanceisaccomplishedthroughaspecialgate	Intersil Intersil Corporation	Intersil
RFP12N10L	文件：361.5 Kbytes Page：6 Pages	12A,100V,0.200Ohm,LogicLevel,N-ChannelPowerMOSFET TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitchingandsolenoiddrivers.Thisperformanceisaccomplishedthroughaspecialgate	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFP12N10L	文件：101.13 Kbytes Page：2 Pages	N-ChannelLogicLevelPowerField-EffectTransistors(L2FET) TheRFM12N08LandRFM12N10LandtheRFP12N08LandRFP12N10Laren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddriver	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
RFP12N10L	文件：938.21 Kbytes Page：7 Pages	N-Channel100-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
SPR12N10	文件：326.7 Kbytes Page：4 Pages	N-ChannelEnhancementModePowerMOSFET	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
SSP12N10	文件：290.31 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
ST12N10D	文件：1.00878 Mbytes Page：7 Pages	N-Channel100V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
ST12N10D	文件：578 Kbytes Page：6 Pages	NChannelEnhancementModeMOSFET	STANSON Stanson Technology	STANSON

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詳細(xì)參數(shù)

型號(hào)：
NTD12N10G
功能描述：
MOSFET 100V 12A N-Channel
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市坤融電子科技有限公司	NTD12N10G	ON/安森美	24+	DPAK	20000	只做原廠渠道可追溯貨源	詢價(jià)
深圳市匯萊威科技有限公司	NTD12N10G	ON/安森美	2024	TO-252	505348	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應(yīng)商	詢價(jià)
深圳市中福國(guó)際管理有限公司	NTD12N10G	ONSEMI/安森美	23+	DPAK-3	360000	專業(yè)供應(yīng)MOS/LDO/晶體管/有大量?jī)r(jià)格低	詢價(jià)
深圳市一線半導(dǎo)體有限公司	NTD12N10G	ON	24+	DPAK4LEADSingleG	8866		詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	NTD12N10G	ON	23+	TO-252	5000	原裝正品,假一罰十	詢價(jià)
深圳市卓越微芯電子有限公司	NTD12N10G	ON	2020+	TO-252	125	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市華來(lái)深電子有限公司	NTD12N10G	ON	23+	TO-252	11846	一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價(jià)
深圳市宇集芯電子有限公司	NTD12N10G	ONS	24+	TO-252	90000	一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理	詢價(jià)
深圳市近平電子有限公司	NTD12N10G	ON	6000	面議	19	DIP/SMD	詢價(jià)
瀚佳科技(深圳)有限公司	NTD12N10G	ONS	24+	DPAK(TO-252)	16800	絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?	詢價(jià)

更多NTD12N10G供應(yīng)商更新時(shí)間2025-1-3 9:24:00

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