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NTH4L080N120SC1中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

NTH4L080N120SC1
廠商型號(hào)

NTH4L080N120SC1
功能描述

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L
文件大小

409.41 Kbytes
頁(yè)面數(shù)量

8 頁(yè)
生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱

ONSEMI【安森美半導(dǎo)體】

中文名稱

安森美半導(dǎo)體公司官網(wǎng)
原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載
更新時(shí)間

2025-1-29 23:00:00

NTH4L080N120SC1規(guī)格書詳情

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology

that provide superior switching performance and higher reliability

compared to Silicon. In addition, the low ON resistance and compact

chip size ensure low capacitance and gate charge. Consequently,

system benefits include highest efficiency, faster operation frequency,

increased power density, reduced EMI, and reduced system size.

Features

? 1200 V @ TJ = 175°C

? Max RDS(on) = 110 m at VGS = 20 V, ID = 20 A

? High Speed Switching with Low Capacitance

? 100 Avalanche Tested

? This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb?Free 2LI (on second level interconnection)

Applications

? Industrial Motor Drive

? UPS

? Boost Inverter

? PV Charger

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ON(安森美)
23+
NA/
8735
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
 詢價(jià)
ON
22+
NA
650
原裝正品支持實(shí)單
 詢價(jià)
ON2
23+
原廠原封
450
訂貨1周 原裝正品
 詢價(jià)
ON
589220
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量
 詢價(jià)
ON
23+
TO247
30
正規(guī)渠道,只有原裝!
 詢價(jià)
onsemi(安森美)
23+
TO-247-4
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
ONSEMI
23+
MOSFET
5864
原裝原標(biāo)原盒 給價(jià)就出 全網(wǎng)最低
 詢價(jià)
ON
24+
N/A
8000
全新原裝正品,現(xiàn)貨銷售
 詢價(jià)
24+
3000
公司存貨
 詢價(jià)
PULSE
2023
DIP-8
2580
原廠代理渠道,正品保障
 詢價(jià)

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