首頁 >NTP30N06LG>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NTP30N06LG | Power MOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NTP30N06LG | N-Channel 60 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | |
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
30A,60V,ESDRated,0.047Ohm,LogicLevelN-ChannelPowerMOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg | Intersil Intersil Corporation | Intersil | ||
30A,60V,ESDRated,AvalancheRated,LogicLevelN-ChannelEnhancement-ModePowerMOSFETs Description TheRFP30N06LE,RF1S30N06LEandRF1S30N06LESMareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theywere | HARRIS Harris Corporation | HARRIS | ||
30A,60V,ESDRated,0.047Ohm,LogicLevelN-ChannelPowerMOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
P-ChannelEnhancementModeMOSFET Description TheRLD30N06usesadvancedtrenchtechnologytoprovideexcellentRDS(ON), lowgatechargeandoperationwithgatevoltagesaslowas4.5V. ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. Application Lithiumbatteryprotection Wirele | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
N-ChannelMOSFET | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
N-ChannelMOSFET | semiWell SemiWell Semiconductor | semiWell | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-ChannelMOSFET GeneralDescription ThisPowerMOSFETisproducedusingSemiWell’sadvancedplanarstripe,DMOStechnology.Thislatesttechnologyhasbeenespeciallydesignedtominimizeon-stateresistance,havealowgatechargewithsuperiorswitchingperformance,andruggedavalanchecharacteristics.ThisP | semiWell SemiWell Semiconductor | semiWell | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.045? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.045? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
N-channelMOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelEnhancementmodeTO-251/TO-252MOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER |
詳細(xì)參數(shù)
- 型號:
NTP30N06LG
- 功能描述:
MOSFET NFET 60V 30A LL
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON |
24+ |
TO-2203LEADSTANDA |
8866 |
詢價(jià) | |||
ON |
2018+ |
TO220 |
6528 |
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心 |
詢價(jià) | ||
ON |
23+ |
TO-220-3 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
安森美 |
21+ |
TO220 |
12588 |
原裝現(xiàn)貨,量大可定 |
詢價(jià) | ||
ON |
6000 |
面議 |
19 |
DIP/SMD |
詢價(jià) | ||
ON/安森美 |
22+ |
TO220 |
16547 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
ON |
20+ |
TO-2203LEADSTANDA |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價(jià) | ||
O |
2020+ |
TO-220A |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
ON |
2020+ |
TO-220 |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!? |
詢價(jià) | ||
ON/安森美 |
21+ |
TO220 |
19000 |
只做正品原裝現(xiàn)貨 |
詢價(jià) |
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