NV25640DTHFT3G集成電路（IC）的存儲器規(guī)格書PDF中文資料

NV25640DTHFT3G屬于集成電路（IC）的存儲器。由安森美半導體公司制造生產(chǎn)的NV25640DTHFT3G存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

NV25080, NV25160, NV25320, NV25640 are a EERPOM Serial

8/16/32/64?Kb SPI Automotive Grade 0 devices internally organized

as 1K/2K/4K/8Kx8 bits. It features a 32?byte page write buffer and

supports the Serial Peripheral Interface (SPI) protocol. The device is

enabled through a Chip Select (CS) input. In addition, the required bus

signals are clock input (SCK), data input (SI) and data output (SO)

lines. The HOLD input may be used to pause any serial

communication with the NV25xxx device. The device features

software and hardware write protection, including partial as well as

full array protection. Byte Level On?Chip ECC (Error Correction

Code) makes the device suitable for high reliability applications. The

device offers an additional Identification Page which can be

permanently write protected.

Features

? Automotive AEC?Q100 Grade 0 (?40°C to +150°C) Qualified

? 2.5 V to 5.5 V Supply Voltage Range

? 10 MHz SPI Compatible

? SPI Modes (0,0) & (1,1)

? 32?byte Page Write Buffer

? Self?timed Write Cycle

? Hardware and Software Protection

? Additional Identification Page with Permanent Write Protection

? NV Prefix for Automotive and Other Applications Requiring Site and

Change Control

? Block Write Protection

? Protect 1/4, 1/2 or Entire EEPROM Array

? Low Power CMOS Technology

? Program/Erase Cycles:

? 4,000,000 at 25°C

? 1,200,000 at +85°C

? 600,000 at +125°C

? 300,000 at +150°C

? 200 Year Data Retention

? SOIC, TSSOP 8?lead Packages

? This Device is Pb?Free, Halogen Free/BFR Free, and RoHS

Compliant