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OP113FS

LowNoise,LowDriftSingle-SupplyOperationalAmplifiers

GENERALDESCRIPTION TheOPx13familyofsingle-supplyoperationalamplifiersfeaturesbothlownoiseanddrift.Ithasbeendesignedforsystemswithinternalcalibration.Oftentheseprocessor-basedsystemsarecapableofcalibratingcorrectionsforoffsetandgain,buttheycannotcorrectfort

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

OP113FS

LowNoise,LowDriftSingle-SupplyOperationalAmplifiers

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

OP113FS-REEL

LowNoise,LowDriftSingle-SupplyOperationalAmplifiers

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

OP113FSZ

LowNoise,LowDriftSingle-SupplyOperationalAmplifiers

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

OP113FSZ-REEL

LowNoise,LowDriftSingle-SupplyOperationalAmplifiers

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

OPI113

OPTICALLYCOUPLEDISOLATORS

Description: EachOptoisolatorinthisdatasheetcontainsaninfraredLightEmittingDiode(LED)andaNPNsiliconPhotosensor.TheOPI110andOPI1264deviceshave890nmLightEmittingDiode(LED)andNPNphototransistorsensor,whereastheOP113hasa890nmLEDandaphotodarlingtonsensor.T

Optek

OPTEK Technologies

OPI113

OpticallyCoupledIsolator

Optek

OPTEK Technologies

PBRN113E

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113E

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113E_SER

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113EK

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113EK

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113ES

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113ES

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113ET

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113ET

40V,600mANPNPBRET;R1=1kΩ,R2=1kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113ET

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113ET-Q

40V,600mANPNPBRET;R1=1kΩ,R2=1kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113Z

NPN800mA,40VBISSRETs;R1=1k??R2=10k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113Z

NPN800mA,40VBISSRETs;R1=1kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ADI
2020+
DIP8
9500
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
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ADI
16+
DIP8
8800
進(jìn)口原裝大量現(xiàn)貨熱賣中
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ADI
23+
DIP8
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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亞德諾
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
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AD
23+
DIP-8
12800
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
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AD
DIP-8
899933
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
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AD
23+
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7
全新原裝正品現(xiàn)貨,支持訂貨
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ADI/亞德諾
1901+
DIP8
3625
原裝現(xiàn)貨
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ADI/亞德諾
21+
原封裝
13880
公司只售原裝,支持實(shí)單
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ADI/亞德諾
23+
DIP8
48000
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更多OP113FPZ供應(yīng)商 更新時(shí)間2025-1-9 14:08:00