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PBRN113ZT

40V,600mANPNPBRET;R1=1kΩ,R2=10kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ZT 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113ZT

NPN800mA,40VBISSRETs;R1=1kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113ZT-Q

40V,600mANPNPBRET;R1=1kΩ,R2=10kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ZT-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRP113ET

PNP800mA,40VBISSRET;R1=1kW,R2=1kW

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRP113ET

40V,600mAPNPPBRET;R1=1kΩ,R2=1kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN113ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRP113ET-Q

40V,600mAPNPPBRET;R1=1kΩ,R2=1kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN113ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRP113ZT

PNP800mA,40VBISSRET;R1=1kW,R2=10kW

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRP113ZT

40V,600mAPNPPBRET;R1=1kΩ,R2=10kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN113ZT 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRP113ZT-Q

40V,600mAPNPPBRET;R1=1kΩ,R2=10kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN113ZT-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PC113

StepUpConverterforWhiteLEDDriver

SITI

Silicon Touch Technology Inc.

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
PAN
2447
CAP
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
2000
120
詢價(jià)
HAMAMATSU
2016+
P11379-03AT
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價(jià)
HAMAMAT
1733+
6528
只做進(jìn)口原裝正品假一賠十!
 詢價(jià)
HAMAMATSU
24+
P11379-03
65300
一級代理/放心購買!
 詢價(jià)
原裝
1923+
P11379-03
8900
公司原裝現(xiàn)貨特價(jià)長期供貨歡迎來電咨詢
 詢價(jià)
HAMAMATSU/濱松光子
23+
P11379-03AT
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
HAMAMATSU
22+
P11379-03AT
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價(jià)
HAMAMATSU
24+
NA/
2370
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
HAMAMATSU
23+
P11379-03AT
2370
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多P113供應(yīng)商 更新時(shí)間2025-4-22 15:00:00

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