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P113-155.52

5.0x7.0mm Surface Mount LVPECL Clock Oscillator Series

Description TheConnorWinfieldPxxx-Seriesisa5x7.0mmSurfaceMount,LVPECL,FixedFrequencyCrystalControlledOscillator(XO)designedforapplicationsrequiringtightfrequencystability,widetemperaturerangeandlowjitter.Operatingat2.5Vor3.3Vsupplyvoltage,thePxxx-Seriespr

Connor-Winfield

Connor-Winfield Corporation

PBRN113E

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113E

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBRN113E_SER

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBRN113EK

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113EK

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBRN113ES

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113ES

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PBRN113ET

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113ET

40V,600mANPNPBRET;R1=1kΩ,R2=1kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

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2021+
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100500
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120
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2016+
P11379-03AT
6000
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HAMAMAT
1733+
6528
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24+
P11379-03
65300
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21+
2371
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1923+
P11379-03
8900
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HAMAMAT
21+
6000
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HAMAMAT
23+
10000
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23+
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50000
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