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PBRN113E

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113E

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113E_SER

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113EK

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113EK

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113ES

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113ES

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113ET

NPN800mA,40VBISSRETs;R1=1k??R2=1k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113ET

40V,600mANPNPBRET;R1=1kΩ,R2=1kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113ET

NPN800mA,40VBISSRETs;R1=1kW,R2=1kW

Features *800mAoutputcurrentcapability *Lowcollector-emittersaturationvoltage VCEsat *HighcurrentgainhFE *Reducescomponentcount *Built-inbiasresistors *Reducespickandplacecosts *Simplifiescircuitdesign *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細參數(shù)

  • 型號：

    P113K

  • 功能描述：

    THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|800V V(RRM)|12A I(T)

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號增稅票
 詢價
IR
24+
MODULE
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
 詢價
IR
22+
MODULE
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
MODULE
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
MODULE
7000
詢價
T
24+
SMD-5
7500
絕對原裝自家現(xiàn)貨!真實庫存!歡迎來電!
 詢價
TOSHIBA
10+
SOP-5
6000
絕對原裝自己現(xiàn)貨
 詢價
TOSHIBA
22+
SMD-5
3000
原裝現(xiàn)貨
 詢價
TOSHIBA
2023+
SMD-5
50000
原裝現(xiàn)貨
 詢價
JAN
23+
56688
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
更多P113K供應(yīng)商 更新時間2025-2-12 18:14:00

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