P12C1QDYYRQ1

TPSF12C1-Q1 Standalone Active EMI Filter for Common-mode Noise Mitigation in Single-Phase AC Automotive Power Systems

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:–40°Cto+125°C ambientoperatingtemperature ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?Voltage-sense,current-injectactiveEMIfilter –Optimize

P12C3DYYR

TPSF12C3 Standalone Active EMI Filter for Common-mode Noise Mitigation in Three- Phase AC Power Systems

1Features ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?Voltage-sense,current-injectactiveEMIfilter –OptimizedforCISPR11andCISPR32ClassB conductedEMIrequirements –Lowimpedanceforcommon-modeemissions overtheapplicableE

P12C3QDYYRQ1

TPSF12C3-Q1 Standalone Active EMI Filter for Common-mode Noise Mitigation in Three-Phase AC Automotive Power Systems

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:–40°Cto+125°C ambientoperatingtemperature ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?Voltage-sense,current-injectactiveEMIfilter –Optimize

P12C508

8-Pin, 8-Bit CMOS Microcontroller

GENERALDESCRIPTION ThePIC12C5XXfromMicrochipTechnologyisafamilyoflow-cost,highperformance,8-bit,fullystatic,EEPROM/EPROM/ROM-basedCMOSmicrocontrollers.ItemploysaRISCarchitecturewithonly33singleword/singlecycleinstructions.Allinstructionsaresinglecycle(1μs)exc

P12F60HP2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.67Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

P12FE7R5SBK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=50mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

P12IE90F4

Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm

Description TheSTP12IE90F4ismanufacturedinMonolithicESBTTechnology,aimedtoprovidebestperformancesinhighfrequency/highvoltageapplications. ItisdesignedforuseinGateDrivenbasedtopologies. Generalfeatures ■Highvoltage/highcurrentCascodeconfiguration ■Lowequiv

P12IE95F4

Emitter Switched Bipolar Transistor ESBT 950 V - 12A - 0.083 ohm

Description TheSTP12IE95F4ismanufacturedinMonolithicESBTTechnology,aimedtoprovidebestperformancesinhighfrequency/highvoltageapplications. ItisdesignedforuseinGateDrivenbasedtopologies. Generalfeatures ■Highvoltage/highcurrentCascodeconfiguration ■Lowequiv

P12N60C3

24A, 600V, UFS Series N-Channel IGBTs

Description TheHGTP12N60C3,HGT1S12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchl

P12NB30FP

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex