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PHD3055E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD3055E

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD3055E

N-channelTrenchMOSstandardlevelFET

Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowconduc

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PHD3055E

N-Channel60V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?Materialcategorization: Fordefinitionsofcompliancepleasesee APPLICATIONS ?DC/DCConverters ?DC/ACInverters ?MotorDrives

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

PHD3055L

PowerMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intend

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP3055

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP3055E

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP3055E

N-channelTrenchMOSstandardlevelFET

Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly Featuresandbenefits ■Lowconduct

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PHP3055L

PowerMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePo

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHX3055E

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopewithanelectricallyisolatedmountingtab.Thedeviceuses’trench’technologytoachievelowon-stateresistance. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHX3055L

PowerMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticfull-packenvelope.Thedevicefeatureshighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforus

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PVA3055N

MicroelectronicPowerICHEXFETPowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

PVA3055NPBF

MicroelectronicPowerICHEXFET?PowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

PVA3055NS

MicroelectronicPowerICHEXFETPowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

PVA3055NSPBF

MicroelectronicPowerICHEXFET?PowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

QPA3055P

100WS-BandGaNPowerAmplifier

QORVO

Qorvo, Inc

RCA3055

SILICONN-P-NVERSAWATTTRANSISTORS

SILICONN-P-NVERSAWATTTRANSISTORS DesignedforMedium-PowerLinearandSwitchingServiceinConsumer,Automotive,andIndustrialApplications

GESS

GE Solid State

RCA3055

SILICONN-P-NVERSAWATTTRANSISTORS

High-Current,SiliconN-P-NVERSAWATTTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFD3055

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

RFD3055

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NIKO
23+
TO-220
196000
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N
2020+
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80000
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23+
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24190
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N
23+
TO-220
10000
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VBSEMI/臺(tái)灣微碧
23+
TO-220
50000
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NIKO-SEM
23+
TO220
50000
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NIKO-SEM/尼克森
2022
TO220
80000
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NIKO
2022+
TO-220
12888
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N
23+
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6000
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NIKO-SEM
21+
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10026
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更多P3055LT供應(yīng)商 更新時(shí)間2025-1-14 14:02:00

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