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SVSP7N60FJDD2

Marking：P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerdens

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVSP7N60FJDD2

Marking：P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerdens

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVSP7N60FJDD2

Marking：P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerdens

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVSP7N60FJDD2

Marking：P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerdens

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVSP7N60FJDD2

Marking：P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerdens

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVSP7N60FJDD2

Marking：P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerdens

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

供應商型號品牌批號封裝庫存備注價格
ST
23+24
TO220F
17228
專業(yè)經(jīng)營各種場效應管、三極管、IGBT、可控硅、穩(wěn)壓IC
 詢價
S
23+
TO-220
10000
公司只做原裝正品
 詢價
S
TO-220
22+
6000
十年配單,只做原裝
 詢價
S
23+
TO-220
6000
原裝正品，支持實單
 詢價
ST
23+
TO-220
16900
正規(guī)渠道,只有原裝!
 詢價
ST
TO-220
36900
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ST
22+
TO-220
16900
支持樣品 原裝現(xiàn)貨 提供技術支持!
 詢價
ST/意法
23+
68216
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
ST
2022+
30
全新原裝 貨期兩周
 詢價
ST
23+
TOP220
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
 詢價
更多P7N60FJDD2供應商 更新時間2025-2-5 16:23:00

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