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PBRN113ZS

NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113ZS

NPN 800 mA, 40 V BISS RETs; R1 = 1 k?? R2 = 10 k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113ZS,126

包裝:卷帶(TR) 封裝/外殼:TO-226-3,TO-92-3(TO-226AA)成形引線 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 單,預(yù)偏置 描述:TRANS PREBIAS NPN 0.7W TO92-3

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113ZT

NPN800mA,40VBISSRETs;R1=1k??R2=10k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN113ZT

40V,600mANPNPBRET;R1=1kΩ,R2=10kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ZT 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113ZT

NPN800mA,40VBISSRETs;R1=1kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN113ZT-Q

40V,600mANPNPBRET;R1=1kΩ,R2=10kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP113ZT-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRP113ET

PNP800mA,40VBISSRET;R1=1kW,R2=1kW

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRP113ET

40V,600mAPNPPBRET;R1=1kΩ,R2=1kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN113ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRP113ET-Q

40V,600mAPNPPBRET;R1=1kΩ,R2=1kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN113ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRP113ZT

PNP800mA,40VBISSRET;R1=1kW,R2=10kW

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRP113ZT

40V,600mAPNPPBRET;R1=1kΩ,R2=10kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN113ZT 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRP113ZT-Q

40V,600mAPNPPBRET;R1=1kΩ,R2=10kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN113ZT-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PC113

StepUpConverterforWhiteLEDDriver

SITI

Silicon Touch Technology Inc.

PC113

PC113

PICKER

Picker Components

PC113L

LongCreepageDistanceTypePhotocoupler

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司(SMA)

PDB-C113

BlueEnhancedPhotoconductiveSiliconPhotodiode

ADVANCEDPHOTONIXAdvanced Photonix, Inc.

advanced Photonix, Inc.

PDB-C113

BlueEnhancedPhotoconductiveSiliconPhotodiode

LUNALuna Innovations Incorporated

露娜

PDB-V113

BlueEnhancedPhotovoltaicSiliconPhotodiode

ADVANCEDPHOTONIXAdvanced Photonix, Inc.

advanced Photonix, Inc.

PDTA113E

PNPresistor-equippedtransistors;R1=1kW,R2=1kW

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號:

    PBRN113ZS

  • 制造商:

    PHILIPS

  • 制造商全稱:

    NXP Semiconductors

  • 功能描述:

    NPN 800 mA, 40 V BISS RETs; R1 = 1 k?, R2 = 10 k?

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
NXP
22+
NA
45000
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
NXP USA Inc.
2022+
TO-92-3
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
詢價(jià)
NXP USA Inc.
24+
TO-226-3 TO-92-3(TO-226AA)
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
詢價(jià)
NXP
2016+
SOT-23
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
NXPSEMICONDUCTORS
23+
NA
3486
專做原裝正品,假一罰百!
詢價(jià)
LINEAR/凌特
23+
MSOP8
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢價(jià)
NEXPERIA/安世
2021+
SOT23
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價(jià)
PHI
23+
ST23-3
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
詢價(jià)
NXP/恩智浦
23+
3000
全新原裝,歡迎來電咨詢
詢價(jià)
NXP
2024+
SOT23
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
詢價(jià)
更多PBRN113ZS供應(yīng)商 更新時(shí)間2024-11-15 10:08:00