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PBSS4160PAN

60V,1ANPN/NPNlowVCEsat(BISS)transistor

1.Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits ?Verylowcollec

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4160PAN

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.PNP/PNPcomplement:PBSS5160PAP. Featuresandbenefits ?Verylowcollector-emitt

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBSS4160PANP

60V,1ANPN/PNPlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4160PAN.PNP/PNPcomplement:PBSS5160PAP. Featuresandbenefits ?Verylowcollector-emitte

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBSS4160PANP

60V,1ANPN/PNPlowVCEsat(BISS)transistor

1.Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpower DFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4160PAN.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits ?Verylowcollect

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4160PANPS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020D-6(SOT1118D)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. NPN/NPNcomplement:PBSS4160PANS.PNP/PNPcomplement:PBSS5160PAPS. Features

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4160PANS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4160QA

60V,1ANPNlowVCEsat(BISS)transistor

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBSS4160QA

60V,1ANPNlowVCEsat(BISS)transistor

1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. PNPcomplement:PBSS5160QA. 2.Featuresandbenefits ?Verylowcollector-

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4160QA-Q

60V,1ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-Mounted Device(SMD)plasticpackagewithvisibleandsolderablesidepads. 2.Featuresandbenefits ?Verylowcollector-emittersaturationvoltageVCEsat ?Highcollectorcurrentcapabi

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4160T

60V,1ANPNlowVCEsat(BISS)transistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23plasticpackage.PNPcomplement:PBSS5160T. 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highefficiency,reducesheatgeneration ?Reducesprint

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4160T

60V,1ANPNlowVCEsat(BISS)transistor

DESCRIPTION NPNlowVCEsattransistorinaSOT23plasticpackage. PNPcomplement:PBSS5160T. FEATURES ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highefficiency,reducesheatgeneration ?Reducesprinted-circuitboardarearequired ?

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS4160T

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS4160T

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

PBSS4160T-Q

60V,1ANPNlowVCEsat(BISS)transistor

1.Generaldescription NPNlowVCEsattransistorinasmallSOT23plasticpackage.PNPcomplement:PBSS5160T-Q. 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highefficiency,reducesheatgeneration ?Reducespri

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4160U

60V,1ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT323(SC-70)SurfaceMountedDevice(SMD)plasticpackage. PNPcomplement:PBSS5160U. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM ■Highcol

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBSS4160U

60V,1ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4160V

60V,1ANPNlowVCEsat(BISS)transistor

1.Generaldescription LowVCEsat(BISS)NPNtransistorinaSOT666ultrasmallandflatleadSurface-MountedDevice (SMD)plasticpackage. PNPcomplement:PBSS5160V 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4160V

60V,1ANPNlowVCEsat(BISS)transistor

Generaldescription LowVCEsat(BISS)NPNtransistorinaSOT666plasticpackage. PNPcomplement:PBSS5160V. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiency,reducesheatgeneration ■Reducesprinted-circuitboarda

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PBSS4160V

60V,1ANPNlowVCEsat(BISS)transistor

Generaldescription LowVCEsat(BISS)NPNtransistorinaSOT666plasticpackage. PNPcomplement:PBSS5160V. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiency,reducesheatgeneration ■Reducesprinted-circuitboarda

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS4160X

60V,1ANPNlowVCEsatBISStransistor

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

詳細參數(shù)

  • 型號：

    PBSS4160DS T/R

  • 功能描述：

    兩極晶體管 - BJT LO VCESAT(BISS)TRANS TAPE-7

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    PNP 集電極—基極電壓

  • VCBO：

    集電極—發(fā)射極最大電壓

  • VCEO：

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO：

    - 6 V

  • 增益帶寬產(chǎn)品fT：

    直流集電極/Base Gain hfe

  • Min：

    100 A

  • 安裝風格：

    SMD/SMT

  • 封裝/箱體：

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
NXP
22+
SOT23
28600
只做原裝正品現(xiàn)貨假一賠十一級代理
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NXP
1019+;/
SOT23
500
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
NXP
SOT23
699839
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NXP
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
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NXP
2023+
SOT23
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
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NXP
23+
SOT23
500
全新原裝正品現(xiàn)貨,支持訂貨
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NXP
23+
SOT23
10000
原裝正品現(xiàn)貨
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NEXPERIA
1809+
TSOP-6
6675
就找我吧!--邀您體驗愉快問購元件!
 詢價
N/A
2021++
DIP
33200
原裝正品價格優(yōu)勢!歡迎詢價QQ:385913858TEL:15
 詢價
NEXPERIA/安世
22+
46200
鄭重承諾只做原裝進口貨
 詢價
更多PBSS4160DS T/R供應(yīng)商 更新時間2024-11-17 14:08:00

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