PBSS5350T-Q中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1. General description

PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

package.

NPN complement: PBSS4350T-Q

2. Features and benefits

? Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat

? High collector current capability

? High collector current gain

? Improved efficiency due to reduced heat generation

? Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

? Power management applications

? Low and medium power DC/DC converters

? Supply line switching

? Battery chargers

? Linear voltage regulation with low voltage drop-out (LDO)