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PCM-3618I

PC/104 Datacom Modules

PC/104DatacomModules PCM-3117 PCItoISABridgeModule PCM-3614/3618 4/8-PortRS-422/485High-speedPC/104Module PCM-3614I/3618I 4/8-PortRS-232/422/485PCI-104Modules PCM-3641I/3642I 4/8-PortRS-232PCI-104Modules PCM-3680/I 2-PortCAN-busPC/104/PCI-104ModulewithIsolationPro

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技(中國)有限公司

PCM-3618I

PC/104 Datacom Modules

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技(中國)有限公司

PCM-3618I-AE

PC/104 Datacom Modules

PC/104DatacomModules PCM-3117 PCItoISABridgeModule PCM-3614/3618 4/8-PortRS-422/485High-speedPC/104Module PCM-3614I/3618I 4/8-PortRS-232/422/485PCI-104Modules PCM-3641I/3642I 4/8-PortRS-232PCI-104Modules PCM-3680/I 2-PortCAN-busPC/104/PCI-104ModulewithIsolationPro

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技(中國)有限公司

PE3618

CABLEASSEMBLY,RG216/U,75OHMNMALETO75OHMNMALE

PASTERNACK

Pasternack Enterprises, Inc.

PE3618LF

CABLEASSEMBLY,RG216/U,75OHMNMALETO75OHMNMALE

PASTERNACK

Pasternack Enterprises, Inc.

PST3618NR

ICforCMOSSystemReset

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會社

PST3618UR

ICforCMOSSystemReset

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會社

RMQCEA3618DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCHA3618DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCHA3618DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSAA3618DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)

Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSDA3618DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSGA3618DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSKA3618DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT

Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems 

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

TDA3618

Multiplevoltageregulatorwithswitchandignitionbuffers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TDA3618

Multiplevoltageregulatorwithswitchandignitionbuffers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TDA3618AJR

Multiplevoltageregulatorwithswitchandignitionbuffers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TDA3618JR

Multiplevoltageregulatorwithswitchandignitionbuffers

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

TPS3618

BATTERY-BACKUPSUPERVISORFORRAMRETENTION

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

VS3618AH

N-Channel30V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?LowOn-Resistance ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverters,HighSpeedSwitching

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

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Advantech
22+
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6878
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ADVANTECH
23+
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19960
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ADVANTECH
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500000
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FREESCA
2020+
SOP
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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FREESCALE
22+
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28600
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FREESCALE
07+
SOP
206
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23+
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12800
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23+
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206
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23+
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10000
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更多PCM-3618I供應(yīng)商 更新時(shí)間2024-11-15 10:08:00