零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
PST3618NR | IC for CMOS System Reset | MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會(huì)社 | MITSUMI | |
ICforCMOSSystemReset | MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會(huì)社 | MITSUMI | ||
36-MbitDDR?IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency) Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
Multiplevoltageregulatorwithswitchandignitionbuffers | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
Multiplevoltageregulatorwithswitchandignitionbuffers | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
Multiplevoltageregulatorwithswitchandignitionbuffers | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
Multiplevoltageregulatorwithswitchandignitionbuffers | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
BATTERY-BACKUPSUPERVISORFORRAMRETENTION | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
N-Channel30V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?LowOn-Resistance ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverters,HighSpeedSwitching | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
ClampFilters(FerriteCorewithCase) FEATURES ?Uniqueplasticcaseensuressimple,convenientinstallationandincludesaself-holdingmechanismtopreventslippageoncables. ?Ferritecoreprovidesexcellentabsorptionofhigh-frequencyEMC. ?HighlyeffectiveascountermeasureagainstcommonmodeEMCwithoutadverseeffe | TDKTDK Corporation TDK株式會(huì)社東電化(中國(guó))投資有限公司 | TDK | ||
ClampFilters(FerriteCorewithCase)Forcable ClampFiltersForCable FEATURES ?Uniqueplasticcaseensuressimple,convenientinstallationandincludesaself-holdingmechanismtopreventslippageoncables. ?Ferritecoreprovidesexcellentabsorptionofhigh-frequencyEMC. ?Highlyeffectiveascountermeasureagainstcommon | TDKTDK Corporation TDK株式會(huì)社東電化(中國(guó))投資有限公司 | TDK | ||
ClampFiltersForCable ClampFiltersForCable FEATURES ?Uniqueplasticcaseensuressimple,convenientinstallationandincludesaself-holdingmechanismtopreventslippageoncables. ?Ferritecoreprovidesexcellentabsorptionofhigh-frequencyEMC. ?Highlyeffectiveascountermeasureagainstcommon | TDKTDK Corporation TDK株式會(huì)社東電化(中國(guó))投資有限公司 | TDK |
詳細(xì)參數(shù)
- 型號(hào):
PST3618NR
- 制造商:
MITSUMI
- 制造商全稱(chēng):
Mitsumi Electronics, Corp.
- 功能描述:
IC for CMOS System Reset
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
MITSUMI |
24+ |
QFN |
5000 |
只做原裝公司現(xiàn)貨 |
詢(xún)價(jià) | ||
MITSUMI |
23+ |
QFN |
3000 |
一級(jí)代理原廠VIP渠道,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、 |
詢(xún)價(jià) | ||
MITSUMI |
2018+ |
SOP/DIPQFP |
597 |
原裝假一賠十 |
詢(xún)價(jià) | ||
MITSUMI |
22+ |
QFN |
28600 |
只做原裝正品現(xiàn)貨假一賠十一級(jí)代理 |
詢(xún)價(jià) | ||
MITSUMI |
23+ |
QFN |
29403 |
原盒原標(biāo),正品現(xiàn)貨 誠(chéng)信經(jīng)營(yíng) 價(jià)格美麗 假一罰十 |
詢(xún)價(jià) | ||
MITSUBIS |
22+ |
QFN |
3000 |
原裝正品,支持實(shí)單 |
詢(xún)價(jià) | ||
MITSUMI |
0819+ |
QFN |
3826 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
N/A |
2022+ |
SOT89 |
6000 |
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢(xún)價(jià) | ||
MITSUMI |
QFN |
893993 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢(xún)價(jià) | |||
MITSUMI |
589220 |
16余年資質(zhì) 絕對(duì)原盒原盤(pán) 更多數(shù)量 |
詢(xún)價(jià) |
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