DESCRIPTION

The PD57060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57060S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57060S’s superior linearity performance makes it an ideal solution for base station applications.

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

? EXCELLENT THERMAL STABILITY

? COMMON SOURCE CONFIGURATION

? POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V

? NEW RF PLASTIC PACKAGE

PD57060S屬于分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻。意法半導(dǎo)體（ST）集團(tuán)制造生產(chǎn)的PD57060S晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。