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PD57018TR-E分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書(shū)PDF中文資料

PD57018TR-E
廠商型號(hào)

PD57018TR-E

參數(shù)屬性

PD57018TR-E 封裝/外殼為PowerSO-10RF 裸露底部焊盤(pán)(2 條成形引線);包裝為散裝;類別為分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻;產(chǎn)品描述:TRANSISTOR RF POWERSO-10

功能描述

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
TRANSISTOR RF POWERSO-10

封裝外殼

PowerSO-10RF 裸露底部焊盤(pán)(2 條成形引線)

文件大小

560.6 Kbytes

頁(yè)面數(shù)量

28 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

原廠下載下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-27 19:27:00

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PD57018TR-E規(guī)格書(shū)詳情

PD57018TR-E屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的PD57018TR-E晶體管 - FET,MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個(gè)端子的半導(dǎo)體器件,器件中電流受電場(chǎng)控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號(hào)或功率的晶體管類型包括:E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/(look for application note AN1294).

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 18 W with 16.5dB gain@945 MHz/28 V

■ New RF plastic package

產(chǎn)品屬性

更多
  • 產(chǎn)品編號(hào):

    PD57018TR-E

  • 制造商:

    STMicroelectronics

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET,MOSFET - 射頻

  • 包裝:

    散裝

  • 晶體管類型:

    LDMOS

  • 頻率:

    945MHz

  • 增益:

    16.5dB

  • 額定電流(安培):

    2.5A

  • 功率 - 輸出:

    18W

  • 封裝/外殼:

    PowerSO-10RF 裸露底部焊盤(pán)(2 條成形引線)

  • 供應(yīng)商器件封裝:

    PowerSO-10RF(成形引線)

  • 描述:

    TRANSISTOR RF POWERSO-10

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST/意法半導(dǎo)體
23+
10RF-Formed-4
12820
正規(guī)渠道,只有原裝!
詢價(jià)
ST/意法半導(dǎo)體
2023+
10RF-Formed-4
6000
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
詢價(jià)
ST/意法半導(dǎo)體
21+
10RF-Formed-4
8860
只做原裝,質(zhì)量保證
詢價(jià)
STMicro.
23+
PowerSO-10RF
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
ST/意法半導(dǎo)體
21+
10RF-Formed-4
13880
公司只售原裝,支持實(shí)單
詢價(jià)
ST/意法半導(dǎo)體
24+
10RF-Formed-4
7188
秉承只做原裝 終端我們可以提供技術(shù)支持
詢價(jià)
ST/意法
22+
TO-59
1000
正規(guī)渠道原裝正品
詢價(jià)
STM
22+
PowerSO-10RF
1800
詢價(jià)
STMicroelectronics
24+
PowerSO-10RF 裸露底部焊盤(pán)(2
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
ST(意法)
23+
15000
專業(yè)幫助客戶找貨 配單,誠(chéng)信可靠!
詢價(jià)