首頁(yè) >PHD11N06LT>規(guī)格書列表

零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

PHD11N06LT

TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD11N06LT

N-channel TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHD11N06LT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

11N06

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

11N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

11N06LTA

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB11N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHB11N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHB11N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP11N06LT

N-channelTrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT11N06

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT11N06

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT11N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT11N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PJD11N06A

60VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@6A

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PJD11N06A-AU

60VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@6A

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    PHD11N06LT

  • 制造商:

    PHILIPS

  • 制造商全稱:

    NXP Semiconductors

  • 功能描述:

    N-channel TrenchMOS transistor Logic level FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
PHILIPS/飛利浦
24+
5000
只做原廠渠道 可追溯貨源
詢價(jià)
NXP
1415+
TO-252
28500
全新原裝正品,優(yōu)勢(shì)熱賣
詢價(jià)
Philips
23+
TO-252
9500
專業(yè)優(yōu)勢(shì)供應(yīng)
詢價(jià)
NXP
23+
TO-252
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
PHILIPS
2020+
SOT428(D-PAK)
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
詢價(jià)
PANASONIC/松下
23+
TO-251
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢價(jià)
PHILIPS
1709+
TO-252/D-
32500
普通
詢價(jià)
PHILIPS
22+
TO252
28600
只做原裝正品現(xiàn)貨假一賠十一級(jí)代理
詢價(jià)
PHILIPS
21+
TO-252
30490
原裝現(xiàn)貨庫(kù)存
詢價(jià)
NXP/恩智浦
2022+
SOT-252
12888
原廠代理 終端免費(fèi)提供樣品
詢價(jià)
更多PHD11N06LT供應(yīng)商 更新時(shí)間2024-10-25 15:00:00