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PHT4NQ10T

N-channel enhancement mode field-effect transistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Features ■TrenchMOS?technology ■Veryfastswitching ■Surfacemountpackage. Applications ■PrimarysideswitchinDCtoDCconverters ■Highspeedlinedriver ■Fastgener

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT4NQ10T

N-Channel 100-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

PHT4NQ10T

TrenchMOS? standard level FET

1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS?technology. Productavailability: PHT4NQ10TinSOT223. 2.Features nTrenchMOS?technology nVeryfastswitching nSurfacemountpackage. 3.Applications nPrimarysideswitchinDCto

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PHT6N03LT

TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHT6N03LTissuppliedintheSOT223surfa

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT6N03T

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technology,thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintende

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT6N06

TrenchMOS transistor Standard level FET

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHT6N06TinSOT223.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT6N06LT

TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT6N06LT

N-Channel 60-V (D-S) MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET APPLICATIONS ?LoadSwitchesforPortableDevices

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

PHT6N06LT

TrenchMOS? transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmode logiclevelfield-effectpower transistorinaplasticenvelope suitableforsurfacemounting. Thedevicefeaturesverylow on-stateresistanceandhas integralzenerdiodesgiving ESDprotection.Itisintendedfor useinDC-DCconvertersand

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PHT6N06T

TrenchMOS transistor Standard level FET

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHT6N06TinSOT223.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號：

    PHT

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    High Precision Wraparound - High Temperature(230 °C) Thin Film Chip Resistors

供應(yīng)商型號品牌批號封裝庫存備注價格
NIEC
23+
模塊
595
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢!
 詢價
飛利浦
24+
TO-223
4897
絕對原裝!現(xiàn)貨熱賣!
 詢價
24+
模塊
135
詢價
DISCRETE
4000
PH3
20000
詢價
MAXIM
23+
SOT23-5
5000
原裝正品,假一罰十
 詢價
PHILIPS
2020+
SOT223
10
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
PHILIPS
17+
SOT-223
6200
詢價
NXP
16+
NA
8800
誠信經(jīng)營
 詢價
NXP
2016+
SOT-223
3500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
NIEC
23+
模塊
360
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
更多PHT供應(yīng)商 更新時間2025-3-14 7:49:00

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