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PHT

High Stability - High Temperature (230 °C) Thin Film Wraparound Chip Resistors, Sulfur Resistant

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

PHT

High Stability - High Temperature (230 °C) Thin Film Wraparound Chip Resistors, Sulfur Resistant

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

PHT

SLIM BODY FLAT RIBBON IDC CABLES (2.54 mm) .100 PITCH

Samtec

Samtec, Inc

PHT11N06

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT11N06

TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT11N06LT

TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT11N06T

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT-1901

LOW PROFILE INTERFACE COUPLING AND HYBRID TRANSFORMERS

LOWPROFILEINTERFACECOUPLINGANDHYBRIDTRANSFORMERS

MICRO-ELECTRONICS

Micro Electronics

PHT-1902

LOW PROFILE INTERFACE COUPLING AND HYBRID TRANSFORMERS

LOWPROFILEINTERFACECOUPLINGANDHYBRIDTRANSFORMERS

MICRO-ELECTRONICS

Micro Electronics

PHT-1903

LOW PROFILE INTERFACE COUPLING AND HYBRID TRANSFORMERS

LOWPROFILEINTERFACECOUPLINGANDHYBRIDTRANSFORMERS

MICRO-ELECTRONICS

Micro Electronics

PHT-1904

LOW PROFILE INTERFACE COUPLING AND HYBRID TRANSFORMERS

LOWPROFILEINTERFACECOUPLINGANDHYBRIDTRANSFORMERS

MICRO-ELECTRONICS

Micro Electronics

PHT1N52S

PowerMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformance.IntendedforuseinCompactFluorescentLights

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT1N60R

PowerMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformance.IntendedforuseinCompactFluorescentLights

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT2508

THYRISTOR MODULE 250A / 800V

FEATURES *IsolatedBase *SingleThyristorModule *HighSurgeCapability *ULRecognized,FileNo.E187184 TYPICALAPPLICATIONS *RectifiedForGeneralUse

NIEC

Nihon Inter Electronics Corporation

PHT-2508

THYRISTOR MODULE 250A / 800V

FEATURES *IsolatedBase *SingleThyristorModule *HighSurgeCapability *ULRecognized,FileNo.E187184 TYPICALAPPLICATIONS *RectifiedForGeneralUse

NIEC

Nihon Inter Electronics Corporation

PHT2NQ10T

N-channel TrenchMOS transistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: PHT2NQ10TinSOT223 Features ■TrenchMOS?technology ■Fastswitching ■Surfacemountpackage. Applications ■PrimarysideswitchinDCtoDC

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT2NQ10T

N-Channel 100-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

PHT4NQ10LT

N-channel enhancement mode field-effect transistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: PHT4NQ10LTinSOT223. Features ■TrenchMOS?technology ■Fastswitching ■Lowon-stateresistance ■Surfacemountpackage ■Logiclevelcompatible.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHT4NQ10LT

N-Channel 100-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

PHT4NQ10LT

N-channel TrenchMOS logic level FET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplications. 1.2Featuresandbenefits ?Lowcond

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號：

    PHT

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    High Precision Wraparound - High Temperature(230 °C) Thin Film Chip Resistors

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
NIEC
23+
模塊
595
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢!
 詢價(jià)
飛利浦
24+
TO-223
4897
絕對原裝!現(xiàn)貨熱賣!
 詢價(jià)
24+
模塊
135
詢價(jià)
DISCRETE
4000
PH3
20000
詢價(jià)
MAXIM
23+
SOT23-5
5000
原裝正品,假一罰十
 詢價(jià)
PHILIPS
2020+
SOT223
10
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
PHILIPS
17+
SOT-223
6200
詢價(jià)
NXP
16+
NA
8800
誠信經(jīng)營
 詢價(jià)
NXP
2016+
SOT-223
3500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
NIEC
23+
模塊
360
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價(jià)
更多PHT供應(yīng)商 更新時(shí)間2025-1-6 16:31:00

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