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PMBD353

Schottky barrier double diode

DESCRIPTION PlanarSchottkybarrierdoublediodeinaSOT23smallplasticSMDpackage. FEATURES ?Lowforwardvoltage ?SmallSMDpackage ?Lowcapacitance. APPLICATIONS ?UHFmixer ?Samplingcircuits ?Modulators ?Phasedetection.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PMBD353

Schottky barrier double diode

DESCRIPTION PlanarSchottkybarrierdoublediodeinaSOT23smallplasticSMDpackage. FEATURES ?Lowforwardvoltage ?SmallSMDpackage ?Lowcapacitance. APPLICATIONS ?UHFmixer ?Samplingcircuits ?Modulators ?Phasedetection.

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PMBD353

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PMBD353

Marking:4F;Package:SOT23;Schottky barrier double diode

FEATURES ?Lowforwardvoltage ?SmallSMDpackage ?Lowcapacitance. APPLICATIONS ?UHFmixer ?Samplingcircuits ?Modulators ?Phasedetection. DESCRIPTION PlanarSchottkybarrierdoublediodeinaSOT23smallplasticSMDpackage.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMBD354

Schottky barrier double diode

DESCRIPTION PlanarSchottkybarrierdoublediodeinaSOT23smallplasticSMDpackage. FEATURES ?Lowforwardvoltage ?SmallSMDpackage ?Lowcapacitance ?Matchedcapacitance. APPLICATIONS ?UHFmixer ?Samplingcircuits ?Modulators ?Phasedetection.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PMBD354

Schottky barrier double diode

DESCRIPTION PlanarSchottkybarrierdoublediodeinaSOT23smallplasticSMDpackage. FEATURES ?Lowforwardvoltage ?SmallSMDpackage ?Lowcapacitance ?Matchedcapacitance. APPLICATIONS ?UHFmixer ?Samplingcircuits ?Modulators ?Phasedetection.

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PMBD354

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PMBD354

Marking:V8;Package:SOT23;Schottky barrier double diode

FEATURES ?Lowforwardvoltage ?SmallSMDpackage ?Lowcapacitance ?Matchedcapacitance. APPLICATIONS ?UHFmixer ?Samplingcircuits ?Modulators ?Phasedetection. DESCRIPTION PlanarSchottkybarrierdoublediodeinaSOT23smallplasticSMDpackage.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMBD6050

High-speed diode

DESCRIPTION ThePMBD6050isahigh-speedswitchingdiodefabricatedinplanartechnology,andencapsulatedinthesmallSOT23plasticSMDpackage. FEATURES ?SmallplasticSMDpackage ?Highswitchingspeed:max.4ns ?Continuousreversevoltage:max.70V ?Repetitivepeakreversevoltage:

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PMBD6050

High-speed diode

DESCRIPTION ThePMBD6050isahigh-speedswitchingdiodefabricatedinplanartechnology,andencapsulatedinthesmallSOT23plasticSMDpackage. FEATURES ?SmallplasticSMDpackage ?Highswitchingspeed:max.4ns ?Continuousreversevoltage:max.70V ?Repetitivepeakreversevoltage:

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

晶體管資料

  • 型號:

    PMBTA12

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl

  • 性質(zhì):

    表面帖裝型 (SMD)

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    20V

  • 最大電流允許值:

    0.5A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    MMBTA12,

  • 最大耗散功率:

    0.625W

  • 放大倍數(shù):

  • 圖片代號:

    H-15

  • vtest:

    20

  • htest:

    999900

  • atest:

    0.5

  • wtest:

    0.625

詳細(xì)參數(shù)

  • 型號:

    PMB

  • 制造商:

    Ericsson

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