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PMBFJ111

N-channel junction FETs

DESCRIPTION SymmetricalN-channeljunctionFETsinasurfacemountSOT23envelope.Intendedforuseinapplicationssuchasanalogswitches,choppers,commutators,multiplexersandthinandthickfilmhybrids. FEATURES ?High-speedswitching ?Interchangeabilityofdrainandsourceconnections

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PMBFJ111

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PMBFJ111

N-channel junction FETs Rev. 4 ??20 September 2011

Generaldescription SymmetricalN-channeljunctionFETsinaSOT23package. Featuresandbenefits ■High-speedswitching ■Interchangeabilityofdrainandsourceconnections ■LowRDSonatzerogatevoltage( Applications ■Analogswitches ■Choppers ■Commutators ■Multiplexers ■Thin

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PMBFJ112

N-channel junction FETs

DESCRIPTION SymmetricalN-channeljunctionFETsinasurfacemountSOT23envelope.Intendedforuseinapplicationssuchasanalogswitches,choppers,commutators,multiplexersandthinandthickfilmhybrids. FEATURES ?High-speedswitching ?Interchangeabilityofdrainandsourceconnections

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PMBFJ112

N-channel junction FETs Rev. 4 ??20 September 2011

Generaldescription SymmetricalN-channeljunctionFETsinaSOT23package. Featuresandbenefits ■High-speedswitching ■Interchangeabilityofdrainandsourceconnections ■LowRDSonatzerogatevoltage( Applications ■Analogswitches ■Choppers ■Commutators ■Multiplexers ■Thin

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PMBFJ112

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PMBFJ112-215

N-channel junction FETs Rev. 4 ??20 September 2011

Generaldescription SymmetricalN-channeljunctionFETsinaSOT23package. Featuresandbenefits ■High-speedswitching ■Interchangeabilityofdrainandsourceconnections ■LowRDSonatzerogatevoltage( Applications ■Analogswitches ■Choppers ■Commutators ■Multiplexers ■Thin

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PMBFJ113

N-channel junction FETs

DESCRIPTION SymmetricalN-channeljunctionFETsinasurfacemountSOT23envelope.Intendedforuseinapplicationssuchasanalogswitches,choppers,commutators,multiplexersandthinandthickfilmhybrids. FEATURES ?High-speedswitching ?Interchangeabilityofdrainandsourceconnections

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PMBFJ113

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PMBFJ113

N-channel junction FETs Rev. 4 ??20 September 2011

Generaldescription SymmetricalN-channeljunctionFETsinaSOT23package. Featuresandbenefits ■High-speedswitching ■Interchangeabilityofdrainandsourceconnections ■LowRDSonatzerogatevoltage( Applications ■Analogswitches ■Choppers ■Commutators ■Multiplexers ■Thin

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

晶體管資料

  • 型號:

    PMBTA12

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl

  • 性質(zhì):

    表面帖裝型 (SMD)

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    20V

  • 最大電流允許值:

    0.5A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    MMBTA12,

  • 最大耗散功率:

    0.625W

  • 放大倍數(shù):

  • 圖片代號:

    H-15

  • vtest:

    20

  • htest:

    999900

  • atest:

    0.5

  • wtest:

    0.625

詳細(xì)參數(shù)

  • 型號:

    PMB

  • 制造商:

    Ericsson

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