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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
PTF	文件：199.66 Kbytes Page：3 Pages	Miniature Power Relay	MACOM Tyco Electronics	MACOM
PTF	文件：261.459 Kbytes Page：3 Pages	Miniature Power Relay PTF	MACOM Tyco Electronics	MACOM
PTF	文件：156.96 Kbytes Page：4 Pages	Metal Film Resistors, High Precision, High Stability	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
PTF	文件：544.85 Kbytes Page：7 Pages	Long Life Slide Potentiometer	BournsBourns Electronic Solutions 伯恩斯伯恩斯（邦士）	Bourns
PTF	文件：350.32 Kbytes Page：8 Pages	Platinum Thin Film (PTF) Temperature Elements	TECTE Connectivity Ltd 泰科電子泰科電子有限公司	TEC
PTF08	文件：300.71 Kbytes Page：13 Pages	General Purpose Relay AMiniaturePowerRelay ■Equippedwitharcbarrier. ■Dielectricstrength:2,000V. ■Built-indiodemodelsaddedtotheLYSeries. ■Single-poleanddouble-polemodelsareapplicabletooperatingcoilswithratingsof100/110VAC,110/120VAC,200/220VAC,220/240VAC,or100/110VDC	OMRONOmron Electronics LLC 歐姆龍歐姆龍株式會社	OMRON
PTF080101	文件：64.14 Kbytes Page：4 Pages	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutputpower	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
PTF080101M	文件：258.49 Kbytes Page：8 Pages	High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz Description ThePTF080101Misanunmatched10-wattGOLDMOS?FETintendedforclassABbasestationapplicationsinthe450MHzto960MHzband.ThisLDMOSdeviceoffersexcellentgain,efficiencyandlinearityperformanceinasmallfootprint. Features ?TypicalEDGEperformance -Averageout	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
PTF080101S	文件：64.14 Kbytes Page：4 Pages	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutputpower	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
PTF080101S	文件：172.75 Kbytes Page：9 Pages	Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz Description ThePTF080101isa10W,internallymatchedGOLDMOSFETintendedforEDGEapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutputpower	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
PTF080451	文件：158.52 Kbytes Page：9 Pages	LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz Description ThePTF080451isa45W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -A	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
PTF080451E	文件：158.52 Kbytes Page：9 Pages	LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz Description ThePTF080451isa45W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -A	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
PTF080601	文件：293.73 Kbytes Page：6 Pages	LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutput	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
PTF080601A	文件：293.73 Kbytes Page：6 Pages	LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutput	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
PTF080601E	文件：293.73 Kbytes Page：6 Pages	LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutput	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
PTF080601F	文件：293.73 Kbytes Page：6 Pages	LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz Description ThePTF080601isa60–W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutput	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
PTF080901	文件：205.95 Kbytes Page：10 Pages	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutput	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
PTF080901E	文件：205.95 Kbytes Page：10 Pages	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutput	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
PTF080901F	文件：205.95 Kbytes Page：10 Pages	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz Description ThePTF080901isa90W,internallymatchedGOLDMOSFETintendedforEDGEandCDMAapplicationsinthe860to960MHzband.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliability. Features ?Broadbandinternalmatching ?TypicalEDGEperformance -Averageoutput	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
PTF081301E	文件：289.44 Kbytes Page：11 Pages	Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz Description ThePTF081301EandPTF081301Fare130-watt,internally-matchedGOLDMOSFETsintendedforEDGEandCDMAapplicationsinthe869to960MHzbands.Thermally-enhancedpackagingprovidesthecoolestoperationavailable.Fullgoldmetallizationensuresexcellentdevicelifetimeandreliab	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon

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詳細參數(shù)

型號：
PTF
制造商：
MA-COM
制造商全稱：
M/A-COM Technology Solutions, Inc.
功能描述：
Miniature Power Relay

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市佳鑫美電子科技有限公司	PTF		22+	SOT6	3629	原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電!	詢價
深圳市昊創(chuàng)電子有限公司	PTFL04BG471Q2N34B0	MURATA/村田	18+	SMD	288000	原裝正品價格優(yōu)勢	詢價
深圳市恒創(chuàng)達實業(yè)有限公司	PTF10026R3	ERICSSON	17+	NA	6200	100%原裝正品現(xiàn)貨	詢價
深圳市百諾芯科技有限公司	PTFA082201E/1	INFINEON/英飛凌	23+	TO-59	8510	原裝正品代理渠道價格優(yōu)勢	詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	PTF080901E	INFINEON	23+	SOT-502A	5000	原裝正品,假一罰十	詢價
深圳市科雨電子有限公司	PTFL04BH471Q2N34B0	MURATA	20+	傳感器	8796	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳兆威電子有限公司	PTF080901E	INFINEON	23+	MODL	999999	原裝正品現(xiàn)貨量大可訂貨	詢價
深圳市盈宏半導(dǎo)體科技有限公司	PTF14A-E	OMRON/歐姆龍	171819	NA	3740	OMRON/歐姆龍 PTF14A-E 繼電器插座與硬件 SOCKET FOR	詢價
中天科工半導(dǎo)體（深圳）有限公司	PTFM04BD471Q2N34BS	MURATA/村田	20+	SMD	885000	MURATA原裝優(yōu)勢主營型號-可開原型號增稅票	詢價
深圳市能元時代電子有限公司	PTFM04BH222Q2N34BS	MURATA	23+	SMD	12800	##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)	詢價

更多PTF供應(yīng)商更新時間2024-11-5 17:03:00

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