首頁 >PTPS7H2201HKR/EM>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
PTPS7H2201HKR/EM | Radiation Hardened 1.5-V to 7-V, 6-A Load Switch | TI1Texas Instruments 德州儀器 | TI1 | |
PTPS7H2201HKR/EM | Radiation Hardened 1.5-V to 7-V, 6-A Load Switch | TI1Texas Instruments 德州儀器 | TI1 | |
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse 1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse 1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR) | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse 1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse 1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR) | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H2201-SPRadiationHardened1.5-Vto7-V,6-ALoadSwitch 1Features 1?Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg ?Integratedsingle | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse 1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse 1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i | TI1Texas Instruments 德州儀器 | TI1 | ||
RadiationHardened1.5-Vto7-V,6-ALoadSwitch | TI1Texas Instruments 德州儀器 | TI1 | ||
RadiationHardened1.5-Vto7-V,6-ALoadSwitch | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H2201-SPRadiationHardened1.5-Vto7-V,6-ALoadSwitch 1Features 1?Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg ?Integratedsingle | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse 1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR) | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse 1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR) | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse 1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse 1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR) | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse 1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse 1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR) | TI1Texas Instruments 德州儀器 | TI1 | ||
TPS7H2201-SPRadiationHardened1.5-Vto7-V,6-ALoadSwitch 1Features 1?Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg ?Integratedsingle | TITexas Instruments 德州儀器美國德州儀器公司 | TI |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TI |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
TI |
23+ |
5000 |
全新原裝正品現(xiàn)貨 |
詢價 | |||
TI |
22+ |
CFP (HFT) |
6000 |
原廠原裝,價格優(yōu)勢!13246658303 |
詢價 | ||
TI |
23+ |
QFN |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
TI |
21+ |
QFN |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
TI/德州儀器 |
23+ |
QFN |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
TI |
1106+ |
QFN |
1396 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
TI/德州儀器 |
23+ |
QFN |
1396 |
只供應(yīng)原裝正品 歡迎詢價 |
詢價 | ||
TI |
22 |
QFN |
39890 |
3月31原裝,微信報價 |
詢價 | ||
TI |
23+ |
QFN |
5000 |
全新原裝,支持實單,非誠勿擾 |
詢價 |
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