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CEB01N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES TypeVDSSRDS(ON)ID@VGS CEP01N65650V10.5Ω1.3A10V CEF01N65650V10.5Ω1.3A10V CEB01N65650V10.5Ω1.3A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED01N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,1.2A,RDS(ON)=10.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED01N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,0.9A,RDS(ON)=15W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED01N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,0.9A,RDS(ON)=15Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF01N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES TypeVDSSRDS(ON)ID@VGS CEP01N65650V10.5Ω1.3A10V CEF01N65650V10.5Ω1.3A10V CEB01N65650V10.5Ω1.3A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEK01N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,0.35A,RDS(ON)=10.5Ω@VGS=10V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TO-92(Bulk)&TO-92(Ammopack)package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEK01N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,0.35A,RDS(ON)=10.5W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEK01N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,0.3A,RDS(ON)=15W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEK01N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,0.3A,RDS(ON)=15Ω@VGS=10V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TO-92(Bulk)&TO-92(Ammopack)package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP01N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES TypeVDSSRDS(ON)ID@VGS CEP01N65650V10.5Ω1.3A10V CEF01N65650V10.5Ω1.3A10V CEB01N65650V10.5Ω1.3A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CETChino-Excel Technology

華瑞華瑞股份有限公司

供應商型號品牌批號封裝庫存備注價格
UBIQ
22+23+
TO-251
51633
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
UBIQ
24+
TO-251
90000
一級代理商進口原裝現(xiàn)貨、價格合理
 詢價
UBIQ
23+
TO251
10000
公司只做原裝正品
 詢價
UBIQ/力智
23+
TO251-3L
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
UBIQ
2022+
TO-251
50000
原廠代理 終端免費提供樣品
 詢價
UBIQ
22+
TO-251
9723
鄭重承諾只做原裝進口現(xiàn)貨
 詢價
UBIQ
2022+
TO-251
30000
進口原裝現(xiàn)貨供應,絕對原裝 假一罰十
 詢價
UBIQ
TO-251
34639
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
UBIQ/力智
23+
NA/
11259
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
UBIQ
2022+
TO-251
30000
進口原裝現(xiàn)貨供應,原裝 假一罰十
 詢價
更多QM01N65U供應商 更新時間2025-1-28 16:50:00

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