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RCJ120N20

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage-:VDSS=200V(Min) ·FastSwitchingSpeed ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS)

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

RCJ120N20

Nch 200V 12A Power MOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

IIPP120N20NFD

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPP120N20NFD

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP120N20NFD

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH120N20P

PolarHTHiPerFETPowerMOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowQG ?LowRDS(on) ?LowDrain-to-TabCapacitance ?LowPackageInductance Advantages ?EasytoMount ?SpaceSavings

IXYS

IXYS Corporation

IXFK120N20

HiPerFETPowerMOSFETs

SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS) rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applicatio

IXYS

IXYS Corporation

IXFK120N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK120N20P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK120N20P

PolarHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFK120N20P

PolarHTHiPerFETPowerMOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowQG ?LowRDS(on) ?LowDrain-to-TabCapacitance ?LowPackageInductance Advantages ?EasytoMount ?SpaceSavings

IXYS

IXYS Corporation

IXFN120N20

HiPerFETPowerMOSFETs

HiPerFETTMPowerMOSFETsSingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?Internationalstandardpackage ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess

IXYS

IXYS Corporation

IXFN120N20

N-ChannelMOSFET

DESCRIPTION ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage -VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCconverters ·DCchoppers ·Batterychargers ·Temperatureandlightingcontrols ·Switched-modeandresonant-modepowersu

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFR120N20

PowerMOSFET

IXYS

IXYS Corporation

IXFR120N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFR120N20

HiPerFETTMPowerMOSFETsISOPLUS247

HiPerFET?PowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?SiliconChiponDirect-CopperBond(DCB)Substrate ?IsolatedMountingSurface ?2500V~ElectricalIsolation ?AvalancheRated ?FastIntrinsicRectifier ?Lo

IXYS

IXYS Corporation

IXFX120N20

HiPerFETPowerMOSFETs

SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS) rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applicatio

IXYS

IXYS Corporation

IXFX120N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTK120N20P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTK120N20P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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更多RCJ120N20供應(yīng)商 更新時(shí)間2025-1-18 16:59:00

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