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首頁 >IXTK120N20P>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IXTK120N20P	文件：196.99 Kbytes Page：5 Pages	N-Channel Enhancement Mode Avalanche Rated	IXYS IXYS Corporation	IXYS
IXTK120N20P	文件：295.11 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IIPP120N20NFD	文件：338.17 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IPP120N20NFD	文件：1.30327 Mbytes Page：12 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司	Infineon
IPP120N20NFD	文件：338.17 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFH120N20P	文件：601.57 Kbytes Page：5 Pages	PolarHTHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowQG ?LowRDS(on) ?LowDrain-to-TabCapacitance ?LowPackageInductance Advantages ?EasytoMount ?SpaceSavings	IXYS IXYS Corporation	IXYS
IXFK120N20	文件：328.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFK120N20	文件：48.08 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS) rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applicatio	IXYS IXYS Corporation	IXYS
IXFK120N20P	文件：135.75 Kbytes Page：5 Pages	PolarHiPerFETPowerMOSFET	IXYS IXYS Corporation	IXYS
IXFK120N20P	文件：601.57 Kbytes Page：5 Pages	PolarHTHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowQG ?LowRDS(on) ?LowDrain-to-TabCapacitance ?LowPackageInductance Advantages ?EasytoMount ?SpaceSavings	IXYS IXYS Corporation	IXYS
IXFK120N20P	文件：328.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFN120N20	文件：535.83 Kbytes Page：3 Pages	N-ChannelMOSFET DESCRIPTION ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage -VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCconverters ·DCchoppers ·Batterychargers ·Temperatureandlightingcontrols ·Switched-modeandresonant-modepowersu	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFN120N20	文件：69.86 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs HiPerFETTMPowerMOSFETsSingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?Internationalstandardpackage ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess	IXYS IXYS Corporation	IXYS
IXFR120N20	文件：34.51 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsISOPLUS247 HiPerFET?PowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?SiliconChiponDirect-CopperBond(DCB)Substrate ?IsolatedMountingSurface ?2500V~ElectricalIsolation ?AvalancheRated ?FastIntrinsicRectifier ?Lo	IXYS IXYS Corporation	IXYS
IXFR120N20	文件：180.52 Kbytes Page：3 Pages	PowerMOSFET	IXYS IXYS Corporation	IXYS
IXFR120N20	文件：372.04 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFX120N20	文件：367.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFX120N20	文件：48.08 Kbytes Page：2 Pages	HiPerFETPowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS) rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applicatio	IXYS IXYS Corporation	IXYS
IXTQ120N20P	文件：301 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXTQ120N20P	文件：196.99 Kbytes Page：5 Pages	N-ChannelEnhancementModeAvalancheRated	IXYS IXYS Corporation	IXYS

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
中天科工半導(dǎo)體（深圳）有限公司	IXTK120N20P	IXYS	24+	TO-264(IXTK)	30000	晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品	詢價
深圳市一線半導(dǎo)體有限公司	IXTK120N20P	IXYS	24+	TO-264	8866		詢價
瀚佳科技(深圳)有限公司	IXTK120N20P	IXYS	18+	TO-3PL	2050	公司大量全新原裝正品隨時可以發(fā)貨	詢價
深圳市興燦科技有限公司	IXTK120N20P	IXYS	24+	TO-3PL	548		詢價
深圳市艾宇欣科技有限公司	IXTK120N20P	IXYS	1931+	N/A	18	加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物	詢價
深圳兆威電子有限公司	IXTK120N20P	IXYS/艾賽斯	23+	TO-264	90000	只做原廠渠道價格優(yōu)勢可提供技術(shù)支持	詢價
深圳市科雨電子有限公司	IXTK120N20P	IXYS	1809+	TO-264	326	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳市國宇半導(dǎo)體科技有限公司	IXTK120N20P	IXYS/艾賽斯	23+	TO-264	10000	公司只做原裝正品	詢價
深圳市易訊博科技有限公司	IXTK120N20P	IXYS	22+	NA	18	加我QQ或微信咨詢更多詳細(xì)信息,	詢價
深圳市河鋒鑫科技有限公司	IXTK120N20P	IXYS	22+	TO2643 TO264AA	9000	原廠渠道,現(xiàn)貨配單	詢價

更多IXTK120N20P供應(yīng)商更新時間2024-10-27 14:14:00

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