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RF1S630SM中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

RF1S630SM
廠商型號

RF1S630SM

功能描述

9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs

文件大小

62.35 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-19 20:00:00

RF1S630SM規(guī)格書詳情

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features

? 9A, 200V

? rDS(ON) = 0.400?

? Single Pulse Avalanche Energy Rated

? SOA is Power Dissipation Limited

? Nanosecond Switching Speeds

? Linear Transfer Characteristics

? High Input Impedance

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

產(chǎn)品屬性

  • 型號:

    RF1S630SM

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
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24+
TO263
58000
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FAIRCHILD/仙童
23+
NA/
1719
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HARRIS(哈利斯)
23+
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6000
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23+
TO-263
28610
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SOT-263
699839
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23+
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INS
24+
31000
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I
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I
23+
TO-
10000
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詢價
INTERSIL
23+
65480
詢價