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RJP60D0DPE

Silicon N Channel IGBT High Speed Power Switching

SiliconNChannelIGBTHighSpeedPowerSwitching Features ?Shortcircuitwithstandtime(5?styp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) ?Gatetoemittervoltagerating?30V ?Pb-freeleadplatingand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJP60D0DPE_15

Silicon N Channel IGBT High Speed Power Switching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJP60D0DPE-00#J3

包裝：管件 封裝/外殼：SC-83 類別：分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 45A 122W LDPAK

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

RJP60D0DPK

SiliconNChannelIGBTHighSpeedPowerSwitching

SiliconNChannelIGBTHighSpeedPowerSwitching Features ?Shortcircuitwithstandtime(5?styp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) ?Gatetoemittervoltagerating?30V ?Pb-freeleadplatingan

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJP60D0DPM

SiliconNChannelIGBTHighSpeedPowerSwitching

SiliconNChannelIGBTHighSpeedPowerSwitching Features ?Shortcircuitwithstandtime(5?styp.) ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) ?Gatetoemittervoltagerating?30V ?Pb-freeleadplatingan

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

STB60D0

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STB60D0

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STU60D0

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:600Watts FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree

EIC

EIC discrete Semiconductors

STU60D0

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

SZ60D0

SURFACEMOUNTSILICONZENERDIODES

VOLTAGERANGE:3.3-200V POWER:5.0Watts Features ?CompleteVoltageRange3.3to200Volts ?Highpeakreversepowerdissipation ?Highreliability ?Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導體股份有限公司

SZ60D0

SURFACEMOUNTSILICONZENERDIODES

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導體股份有限公司

PDF上傳者：深圳市福田區(qū)吉富昌電子商行

SZ60D0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導體股份有限公司

PDF上傳者：深圳市福田區(qū)吉富昌電子商行

SZ60D0

SURFACEMOUNTSILICONZENERDIODES

EIC

EIC discrete Semiconductors

SZ60D0

SURFACEMOUNTSILICONZENERDIODES

VZ:3.3-200Volts PD:5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

EIC

EIC discrete Semiconductors

詳細參數(shù)

  • 型號：

    RJP60D0DPE

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    Silicon N Channel IGBT High Speed Power Switching

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
23+
LDPAKS
10000
公司只做原裝正品
 詢價
RENESAS/瑞薩
22+
LDPAKS
6000
十年配單,只做原裝
 詢價
RENESAS/瑞薩
23+
TO263
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
RENESAS/瑞薩
23+
LDPAKS
6000
原裝正品，支持實單
 詢價
RENESAS/瑞薩
22+
LDPAKS
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
瑞薩
24+
TO263
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
 詢價
RENESAS
24+
LDPAKS
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
Renesas
20+
N/A
1000
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
RENESAS/瑞薩
22+
SOT-263
20000
保證原裝正品,假一陪十
 詢價
RENESAS
1809+
SC-83
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多RJP60D0DPE供應(yīng)商 更新時間2025-1-11 14:30:00

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